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Formation of Ti 3SiC 2 from Ti-Si-TiC powders by pulse discharge sintering (PDS) technique.

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Bibliographic Details
Title: Formation of Ti 3SiC 2 from Ti-Si-TiC powders by pulse discharge sintering (PDS) technique.
Authors: Songlan Yang1, Zheng-Ming Sun1, Hitoshi Hashimoto1
Source: Materials Research Innovations. Aug2003, Vol. 7 Issue 4, p225. 6p.
Subjects: Titanium compounds, Silicon, Scanning electron microscopy
Abstract: Ti/Si/TiC powder mixture with molar ratios of 2:2:3 were sintered at various temperatures from 700?1300 °C for 15 min by PDS technique. X-ray diffraction (XRD) and scanning electron microscopy (SEM) were used for the evaluation of phase composition in different samples for the understanding of the sintering mechanism for this system. Results showed that Ti 5Si 3 formed as the intermediate phase during sintering. The reaction between Ti 5Si 3 and TiC as well as Si induces the formation of Ti 3SiC 2, and TiSi 2 appears as the byproduct in this process. At temperature above 1000 °C, TiSi 2 reacts with TiC to form Ti 3SiC 2. High Ti 3SiC 2 phase content bulk material can be synthesized at 1300 °C for 15 min. [ABSTRACT FROM AUTHOR]
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Database: Engineering Source
Description
Abstract:Ti/Si/TiC powder mixture with molar ratios of 2:2:3 were sintered at various temperatures from 700?1300 °C for 15 min by PDS technique. X-ray diffraction (XRD) and scanning electron microscopy (SEM) were used for the evaluation of phase composition in different samples for the understanding of the sintering mechanism for this system. Results showed that Ti 5Si 3 formed as the intermediate phase during sintering. The reaction between Ti 5Si 3 and TiC as well as Si induces the formation of Ti 3SiC 2, and TiSi 2 appears as the byproduct in this process. At temperature above 1000 °C, TiSi 2 reacts with TiC to form Ti 3SiC 2. High Ti 3SiC 2 phase content bulk material can be synthesized at 1300 °C for 15 min. [ABSTRACT FROM AUTHOR]
ISSN:14328917
DOI:10.1007/s10019-003-0255-1