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Formation of Ti 3SiC 2 from Ti-Si-TiC powders by pulse discharge sintering (PDS) technique.

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Title: Formation of Ti 3SiC 2 from Ti-Si-TiC powders by pulse discharge sintering (PDS) technique.
Authors: Songlan Yang1, Zheng-Ming Sun1, Hitoshi Hashimoto1
Source: Materials Research Innovations. Aug2003, Vol. 7 Issue 4, p225. 6p.
Subjects: Titanium compounds, Silicon, Scanning electron microscopy
Abstract: Ti/Si/TiC powder mixture with molar ratios of 2:2:3 were sintered at various temperatures from 700?1300 °C for 15 min by PDS technique. X-ray diffraction (XRD) and scanning electron microscopy (SEM) were used for the evaluation of phase composition in different samples for the understanding of the sintering mechanism for this system. Results showed that Ti 5Si 3 formed as the intermediate phase during sintering. The reaction between Ti 5Si 3 and TiC as well as Si induces the formation of Ti 3SiC 2, and TiSi 2 appears as the byproduct in this process. At temperature above 1000 °C, TiSi 2 reacts with TiC to form Ti 3SiC 2. High Ti 3SiC 2 phase content bulk material can be synthesized at 1300 °C for 15 min. [ABSTRACT FROM AUTHOR]
Copyright of Materials Research Innovations is the property of Taylor & Francis Ltd and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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Header DbId: egs
DbLabel: Engineering Source
An: 11090001
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
IllustrationInfo
Items – Name: Title
  Label: Title
  Group: Ti
  Data: Formation of Ti <subscript>3</subscript>SiC <subscript>2</subscript> from Ti-Si-TiC powders by pulse discharge sintering (PDS) technique.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AR" term="%22Songlan+Yang%22">Songlan Yang</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Zheng-Ming+Sun%22">Zheng-Ming Sun</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Hitoshi+Hashimoto%22">Hitoshi Hashimoto</searchLink><relatesTo>1</relatesTo>
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22Materials+Research+Innovations%22">Materials Research Innovations</searchLink>. Aug2003, Vol. 7 Issue 4, p225. 6p.
– Name: Subject
  Label: Subjects
  Group: Su
  Data: <searchLink fieldCode="DE" term="%22Titanium+compounds%22">Titanium compounds</searchLink><br /><searchLink fieldCode="DE" term="%22Silicon%22">Silicon</searchLink><br /><searchLink fieldCode="DE" term="%22Scanning+electron+microscopy%22">Scanning electron microscopy</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: Ti/Si/TiC powder mixture with molar ratios of 2:2:3 were sintered at various temperatures from 700?1300 °C for 15 min by PDS technique. X-ray diffraction (XRD) and scanning electron microscopy (SEM) were used for the evaluation of phase composition in different samples for the understanding of the sintering mechanism for this system. Results showed that Ti 5Si 3 formed as the intermediate phase during sintering. The reaction between Ti 5Si 3 and TiC as well as Si induces the formation of Ti 3SiC 2, and TiSi 2 appears as the byproduct in this process. At temperature above 1000 °C, TiSi 2 reacts with TiC to form Ti 3SiC 2. High Ti 3SiC 2 phase content bulk material can be synthesized at 1300 °C for 15 min. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Materials Research Innovations is the property of Taylor & Francis Ltd and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
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    Identifiers:
      – Type: doi
        Value: 10.1007/s10019-003-0255-1
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      – Code: eng
        Text: English
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      Pagination:
        PageCount: 6
        StartPage: 225
    Subjects:
      – SubjectFull: Titanium compounds
        Type: general
      – SubjectFull: Silicon
        Type: general
      – SubjectFull: Scanning electron microscopy
        Type: general
    Titles:
      – TitleFull: Formation of Ti 3SiC 2 from Ti-Si-TiC powders by pulse discharge sintering (PDS) technique.
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          Name:
            NameFull: Songlan Yang
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            NameFull: Zheng-Ming Sun
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            NameFull: Hitoshi Hashimoto
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            – D: 01
              M: 08
              Text: Aug2003
              Type: published
              Y: 2003
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              Value: 7
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          Titles:
            – TitleFull: Materials Research Innovations
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