Enhanced hole extraction by interaction between CuI and MoO3 in the hole transport layer of organic photovoltaic devices.
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| Title: | Enhanced hole extraction by interaction between CuI and MoO3 in the hole transport layer of organic photovoltaic devices. |
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| Authors: | Yoon, Sangcheol1, Kim, Hyebin1, Shin, Eul-Yong2, Bae, In-Gon3, Park, Byoungchoo3, Noh, Yong-Young2, Hwang, Inchan1 ihwang@kw.ac.kr |
| Source: | Organic Electronics. May2016, Vol. 32, p200-207. 8p. |
| Subjects: | Molybdenum oxides, Cuprous iodide, Photovoltaic cells, Methyl formate, Indium tin oxide |
| Abstract: | The selection of materials for use of a hole transport layer is crucial to improve the photovoltaic performances by means of efficient hole extraction. Herein, we investigate how the formation of a hybrid dual hole transport interlayer consisting of copper (I) iodide (CuI) and molybdenum oxide (MoO 3 ) affects the efficiency of the device based on poly(3-hexylthiophene)(P3HT):[6,6]-phenyl-C61-butyric acid methyl ester (PCBM) blends. The rough surface of a CuI layer was observed when prepared on indium tin oxide (ITO) substrates, but became smooth by the thermal evaporation of MoO 3 on the rough CuI surface, forming a dual layer. The devices incorporated with the layer show an enhancement in efficiency compared to the devices with the CuI or MoO 3 alone layer, which is attributed to enhanced hole extraction. Our X-ray photoelectron spectroscopy (XPS) results show that Mo 5+ defect states are increased by the interaction between MoO 3 and CuI at the interface, giving rise to an increase in gap states, which we attribute to the improvement of hole extraction. [ABSTRACT FROM AUTHOR] |
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| Database: | Engineering Source |
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