APA (7th ed.) Citation

Barreteau, C., Michon, B., Besnard, C., & Giannini, E. (2016). High-pressure melt growth and transport properties of SiP, SiAs, GeP, and GeAs 2D layered semiconductors. Journal of Crystal Growth, 443, 75. https://doi.org/10.1016/j.jcrysgro.2016.03.019

Chicago Style (17th ed.) Citation

Barreteau, C., B. Michon, C. Besnard, and E. Giannini. "High-pressure Melt Growth and Transport Properties of SiP, SiAs, GeP, and GeAs 2D Layered Semiconductors." Journal of Crystal Growth 443 (2016): 75. https://doi.org/10.1016/j.jcrysgro.2016.03.019.

MLA (9th ed.) Citation

Barreteau, C., et al. "High-pressure Melt Growth and Transport Properties of SiP, SiAs, GeP, and GeAs 2D Layered Semiconductors." Journal of Crystal Growth, vol. 443, 2016, p. 75, https://doi.org/10.1016/j.jcrysgro.2016.03.019.