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High-pressure melt growth and transport properties of SiP, SiAs, GeP, and GeAs 2D layered semiconductors.

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Title: High-pressure melt growth and transport properties of SiP, SiAs, GeP, and GeAs 2D layered semiconductors.
Authors: Barreteau, C.1 Celine.Barreteau@unige.ch, Michon, B.1, Besnard, C.1, Giannini, E.1
Source: Journal of Crystal Growth. Jun2016, Vol. 443, p75-80. 6p.
Subjects: Semiconductors, Maleic acid, Sialic acids, Polycrystalline silicon, Germanium crystals, Single crystals
Abstract: Silicon and Germanium monopnictides SiP, SiAs, GeP and GeAs form a family of 2D layered semiconductors. We have succeeded in growing bulk single crystals of these compounds by melt-growth under high pressure (0.5-1 GPa) in a cubic anvil hot press. Large (mm-size), shiny, micaceous crystals of GeP, GeAs and SiAs were obtained, and could be exfoliated into 2D flakes. Small and brittle crystals of SiP were yielded by this method. High-pressure sintered polycrystalline SiP and GeAs have also been successfully used as a precursor in the Chemical Vapor Transport growth of these crystals in the presence of I 2 as a transport agent. All compounds are found to crystallize in the expected layered structure and do not undergo any structural transition at low temperature, as shown by Raman spectroscopy down to T=5 K. All materials exhibit a semiconducting behavior. The electrical resistivity of GeP, GeAs and SiAs is found to depend on temperature following a 2D-Variable Range Hopping conduction mechanism. The availability of bulk crystals of these compounds opens new perspectives in the field of 2D semiconducting materials for device applications. [ABSTRACT FROM AUTHOR]
Copyright of Journal of Crystal Growth is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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DbLabel: Engineering Source
An: 114626709
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
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  Data: High-pressure melt growth and transport properties of SiP, SiAs, GeP, and GeAs 2D layered semiconductors.
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  Data: <searchLink fieldCode="AR" term="%22Barreteau%2C+C%2E%22">Barreteau, C.</searchLink><relatesTo>1</relatesTo><i> Celine.Barreteau@unige.ch</i><br /><searchLink fieldCode="AR" term="%22Michon%2C+B%2E%22">Michon, B.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Besnard%2C+C%2E%22">Besnard, C.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Giannini%2C+E%2E%22">Giannini, E.</searchLink><relatesTo>1</relatesTo>
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Crystal+Growth%22">Journal of Crystal Growth</searchLink>. Jun2016, Vol. 443, p75-80. 6p.
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  Data: <searchLink fieldCode="DE" term="%22Semiconductors%22">Semiconductors</searchLink><br /><searchLink fieldCode="DE" term="%22Maleic+acid%22">Maleic acid</searchLink><br /><searchLink fieldCode="DE" term="%22Sialic+acids%22">Sialic acids</searchLink><br /><searchLink fieldCode="DE" term="%22Polycrystalline+silicon%22">Polycrystalline silicon</searchLink><br /><searchLink fieldCode="DE" term="%22Germanium+crystals%22">Germanium crystals</searchLink><br /><searchLink fieldCode="DE" term="%22Single+crystals%22">Single crystals</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: Silicon and Germanium monopnictides SiP, SiAs, GeP and GeAs form a family of 2D layered semiconductors. We have succeeded in growing bulk single crystals of these compounds by melt-growth under high pressure (0.5-1 GPa) in a cubic anvil hot press. Large (mm-size), shiny, micaceous crystals of GeP, GeAs and SiAs were obtained, and could be exfoliated into 2D flakes. Small and brittle crystals of SiP were yielded by this method. High-pressure sintered polycrystalline SiP and GeAs have also been successfully used as a precursor in the Chemical Vapor Transport growth of these crystals in the presence of I 2 as a transport agent. All compounds are found to crystallize in the expected layered structure and do not undergo any structural transition at low temperature, as shown by Raman spectroscopy down to T=5 K. All materials exhibit a semiconducting behavior. The electrical resistivity of GeP, GeAs and SiAs is found to depend on temperature following a 2D-Variable Range Hopping conduction mechanism. The availability of bulk crystals of these compounds opens new perspectives in the field of 2D semiconducting materials for device applications. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Journal of Crystal Growth is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
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    Identifiers:
      – Type: doi
        Value: 10.1016/j.jcrysgro.2016.03.019
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      – Code: eng
        Text: English
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      Pagination:
        PageCount: 6
        StartPage: 75
    Subjects:
      – SubjectFull: Semiconductors
        Type: general
      – SubjectFull: Maleic acid
        Type: general
      – SubjectFull: Sialic acids
        Type: general
      – SubjectFull: Polycrystalline silicon
        Type: general
      – SubjectFull: Germanium crystals
        Type: general
      – SubjectFull: Single crystals
        Type: general
    Titles:
      – TitleFull: High-pressure melt growth and transport properties of SiP, SiAs, GeP, and GeAs 2D layered semiconductors.
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            NameFull: Barreteau, C.
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            NameFull: Michon, B.
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            NameFull: Besnard, C.
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            NameFull: Giannini, E.
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          Dates:
            – D: 01
              M: 06
              Text: Jun2016
              Type: published
              Y: 2016
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              Value: 443
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            – TitleFull: Journal of Crystal Growth
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