Ultra-Fast Current Mode Sense Amplifier for Small $$I_{\mathrm{CELL}}$$ SRAM in FinFET with Improved Offset Tolerance.

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Bibliographic Details
Title:	Ultra-Fast Current Mode Sense Amplifier for Small $$I_{\mathrm{CELL}}$$ SRAM in FinFET with Improved Offset Tolerance.
Authors:	Reniwal, Bhupendra¹ phd11120202@iiti.ac.in, Vijayvargiya, Vikas¹ phd11120204@iiti.ac.in, Vishvakarma, Santosh¹ skvishvakarma@iiti.ac.in, Dwivedi, Devesh² ddwivedi@in.ibm.com
Source:	Circuits, Systems & Signal Processing. Sep2016, Vol. 35 Issue 9, p3066-3085. 20p.
Subjects:	Static random access memory chips, Field-effect transistors, Simulation methods & models, Electric potential, Integrated memory circuits
Abstract:	In this paper, a novel, high-performance and robust sense amplifier (SA) design is presented for small $$I_\mathrm{CELLl}$$ SRAM, using fin-shaped field effect transistors (FinFET) in 22-nm technology. The technique offers data-line-isolated current sensing approach. Compared with the conventional CSA (CCSA) and hybrid SA (HSA), the proposed current feed-SA (CF-SA) demonstrates 2.15 $$\times $$ and 3.02 $$\times $$ higher differential current, respectively, for $${V}_{\mathrm{DD}}$$ of 0.6 V. Our results indicate that even at the worst corner, CF-SA can provide 2.23 $$\times $$ and 1.7 $$\times $$ higher data-line differential voltage compared with CCSA and HSA, respectively. Further, 66.89 and 31.47 % reductions in the cell access time are achieved compared to the CCSA and HSA, respectively, under similar $$I_\mathrm{CELLl}$$ and bit-line and data-line capacitance. Statistical simulations have proved that the CF-SA provides high read yield with 32.39 and 22.24 % less $$\upsigma _{\mathrm{Delay}}$$ . It also offers a much better read effectiveness and robustness against the data-line capacitance as well as $${V}_{\mathrm{DD}}$$ variation. Furthermore, the CF-SA is able to tolerate a large offset of the input devices, up to 80 mV at $${V}_{\mathrm{DD}}=0.6\hbox {V}$$ . [ABSTRACT FROM AUTHOR]
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Database:	Engineering Source

Description
Abstract:	In this paper, a novel, high-performance and robust sense amplifier (SA) design is presented for small $$I_\mathrm{CELLl}$$ SRAM, using fin-shaped field effect transistors (FinFET) in 22-nm technology. The technique offers data-line-isolated current sensing approach. Compared with the conventional CSA (CCSA) and hybrid SA (HSA), the proposed current feed-SA (CF-SA) demonstrates 2.15 $$\times $$ and 3.02 $$\times $$ higher differential current, respectively, for $${V}_{\mathrm{DD}}$$ of 0.6 V. Our results indicate that even at the worst corner, CF-SA can provide 2.23 $$\times $$ and 1.7 $$\times $$ higher data-line differential voltage compared with CCSA and HSA, respectively. Further, 66.89 and 31.47 % reductions in the cell access time are achieved compared to the CCSA and HSA, respectively, under similar $$I_\mathrm{CELLl}$$ and bit-line and data-line capacitance. Statistical simulations have proved that the CF-SA provides high read yield with 32.39 and 22.24 % less $$\upsigma _{\mathrm{Delay}}$$ . It also offers a much better read effectiveness and robustness against the data-line capacitance as well as $${V}_{\mathrm{DD}}$$ variation. Furthermore, the CF-SA is able to tolerate a large offset of the input devices, up to 80 mV at $${V}_{\mathrm{DD}}=0.6\hbox {V}$$ . [ABSTRACT FROM AUTHOR]
ISSN:	0278081X
DOI:	10.1007/s00034-015-0199-x