Ultra-Fast Current Mode Sense Amplifier for Small $$I_{\mathrm{CELL}}$$ SRAM in FinFET with Improved Offset Tolerance.
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| Title: | Ultra-Fast Current Mode Sense Amplifier for Small $$I_{\mathrm{CELL}}$$ SRAM in FinFET with Improved Offset Tolerance. |
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| Authors: | Reniwal, Bhupendra1 phd11120202@iiti.ac.in, Vijayvargiya, Vikas1 phd11120204@iiti.ac.in, Vishvakarma, Santosh1 skvishvakarma@iiti.ac.in, Dwivedi, Devesh2 ddwivedi@in.ibm.com |
| Source: | Circuits, Systems & Signal Processing. Sep2016, Vol. 35 Issue 9, p3066-3085. 20p. |
| Subjects: | Static random access memory chips, Field-effect transistors, Simulation methods & models, Electric potential, Integrated memory circuits |
| Abstract: | In this paper, a novel, high-performance and robust sense amplifier (SA) design is presented for small $$I_\mathrm{CELLl}$$ SRAM, using fin-shaped field effect transistors (FinFET) in 22-nm technology. The technique offers data-line-isolated current sensing approach. Compared with the conventional CSA (CCSA) and hybrid SA (HSA), the proposed current feed-SA (CF-SA) demonstrates 2.15 $$\times $$ and 3.02 $$\times $$ higher differential current, respectively, for $${V}_{\mathrm{DD}}$$ of 0.6 V. Our results indicate that even at the worst corner, CF-SA can provide 2.23 $$\times $$ and 1.7 $$\times $$ higher data-line differential voltage compared with CCSA and HSA, respectively. Further, 66.89 and 31.47 % reductions in the cell access time are achieved compared to the CCSA and HSA, respectively, under similar $$I_\mathrm{CELLl}$$ and bit-line and data-line capacitance. Statistical simulations have proved that the CF-SA provides high read yield with 32.39 and 22.24 % less $$\upsigma _{\mathrm{Delay}}$$ . It also offers a much better read effectiveness and robustness against the data-line capacitance as well as $${V}_{\mathrm{DD}}$$ variation. Furthermore, the CF-SA is able to tolerate a large offset of the input devices, up to 80 mV at $${V}_{\mathrm{DD}}=0.6\hbox {V}$$ . [ABSTRACT FROM AUTHOR] |
| Copyright of Circuits, Systems & Signal Processing is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
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| Items | – Name: Title Label: Title Group: Ti Data: Ultra-Fast Current Mode Sense Amplifier for Small $$I_{\mathrm{CELL}}$$ SRAM in FinFET with Improved Offset Tolerance. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Reniwal%2C+Bhupendra%22">Reniwal, Bhupendra</searchLink><relatesTo>1</relatesTo><i> phd11120202@iiti.ac.in</i><br /><searchLink fieldCode="AR" term="%22Vijayvargiya%2C+Vikas%22">Vijayvargiya, Vikas</searchLink><relatesTo>1</relatesTo><i> phd11120204@iiti.ac.in</i><br /><searchLink fieldCode="AR" term="%22Vishvakarma%2C+Santosh%22">Vishvakarma, Santosh</searchLink><relatesTo>1</relatesTo><i> skvishvakarma@iiti.ac.in</i><br /><searchLink fieldCode="AR" term="%22Dwivedi%2C+Devesh%22">Dwivedi, Devesh</searchLink><relatesTo>2</relatesTo><i> ddwivedi@in.ibm.com</i> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Circuits%2C+Systems+%26+Signal+Processing%22">Circuits, Systems & Signal Processing</searchLink>. Sep2016, Vol. 35 Issue 9, p3066-3085. 20p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Static+random+access+memory+chips%22">Static random access memory chips</searchLink><br /><searchLink fieldCode="DE" term="%22Field-effect+transistors%22">Field-effect transistors</searchLink><br /><searchLink fieldCode="DE" term="%22Simulation+methods+%26+models%22">Simulation methods & models</searchLink><br /><searchLink fieldCode="DE" term="%22Electric+potential%22">Electric potential</searchLink><br /><searchLink fieldCode="DE" term="%22Integrated+memory+circuits%22">Integrated memory circuits</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: In this paper, a novel, high-performance and robust sense amplifier (SA) design is presented for small $$I_\mathrm{CELLl}$$ SRAM, using fin-shaped field effect transistors (FinFET) in 22-nm technology. The technique offers data-line-isolated current sensing approach. Compared with the conventional CSA (CCSA) and hybrid SA (HSA), the proposed current feed-SA (CF-SA) demonstrates 2.15 $$\times $$ and 3.02 $$\times $$ higher differential current, respectively, for $${V}_{\mathrm{DD}}$$ of 0.6 V. Our results indicate that even at the worst corner, CF-SA can provide 2.23 $$\times $$ and 1.7 $$\times $$ higher data-line differential voltage compared with CCSA and HSA, respectively. Further, 66.89 and 31.47 % reductions in the cell access time are achieved compared to the CCSA and HSA, respectively, under similar $$I_\mathrm{CELLl}$$ and bit-line and data-line capacitance. Statistical simulations have proved that the CF-SA provides high read yield with 32.39 and 22.24 % less $$\upsigma _{\mathrm{Delay}}$$ . It also offers a much better read effectiveness and robustness against the data-line capacitance as well as $${V}_{\mathrm{DD}}$$ variation. Furthermore, the CF-SA is able to tolerate a large offset of the input devices, up to 80 mV at $${V}_{\mathrm{DD}}=0.6\hbox {V}$$ . [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Circuits, Systems & Signal Processing is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1007/s00034-015-0199-x Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 20 StartPage: 3066 Subjects: – SubjectFull: Static random access memory chips Type: general – SubjectFull: Field-effect transistors Type: general – SubjectFull: Simulation methods & models Type: general – SubjectFull: Electric potential Type: general – SubjectFull: Integrated memory circuits Type: general Titles: – TitleFull: Ultra-Fast Current Mode Sense Amplifier for Small $$I_{\mathrm{CELL}}$$ SRAM in FinFET with Improved Offset Tolerance. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Reniwal, Bhupendra – PersonEntity: Name: NameFull: Vijayvargiya, Vikas – PersonEntity: Name: NameFull: Vishvakarma, Santosh – PersonEntity: Name: NameFull: Dwivedi, Devesh IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 09 Text: Sep2016 Type: published Y: 2016 Identifiers: – Type: issn-print Value: 0278081X Numbering: – Type: volume Value: 35 – Type: issue Value: 9 Titles: – TitleFull: Circuits, Systems & Signal Processing Type: main |
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