Bibliographic Details
| Title: |
InGaN multiple quantum well laser diodes grown by molecular beam epitaxy. |
| Authors: |
Hooper, S.E., Kauer, M., Bousquet, V., Johnson, K., Barnes, J.M., Hefferman, J. |
| Source: |
Electronics Letters (Institution of Engineering & Technology). 1/8/2004, Vol. 40 Issue 1, p33-34. 2p. 1 Chart, 2 Graphs. |
| Subjects: |
Diodes, Lasers, Molecular beams, Epitaxy, Molecular dynamics, Electronics |
| Abstract: |
The first InGaN multiple quantum well laser diodes produced by molecular beam epitaxy are reported. Ridge waveguide lasers have been demonstrated at room temperature under pulsed current injection conditions. The lasers emit at a wavelength of approximately 400 nm with a spectral line-width of less than 0.2 nm, and a threshold current density of ∼30 kA cm[sup -2]. [ABSTRACT FROM AUTHOR] |
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| Database: |
Engineering Source |
