View in EDS

InGaN multiple quantum well laser diodes grown by molecular beam epitaxy.

Saved in:
Bibliographic Details
Title: InGaN multiple quantum well laser diodes grown by molecular beam epitaxy.
Authors: Hooper, S.E., Kauer, M., Bousquet, V., Johnson, K., Barnes, J.M., Hefferman, J.
Source: Electronics Letters (Institution of Engineering & Technology). 1/8/2004, Vol. 40 Issue 1, p33-34. 2p. 1 Chart, 2 Graphs.
Subjects: Diodes, Lasers, Molecular beams, Epitaxy, Molecular dynamics, Electronics
Abstract: The first InGaN multiple quantum well laser diodes produced by molecular beam epitaxy are reported. Ridge waveguide lasers have been demonstrated at room temperature under pulsed current injection conditions. The lasers emit at a wavelength of approximately 400 nm with a spectral line-width of less than 0.2 nm, and a threshold current density of ∼30 kA cm[sup -2]. [ABSTRACT FROM AUTHOR]
Copyright of Electronics Letters (Institution of Engineering & Technology) is the property of Institution of Engineering & Technology and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
FullText Text:
  Availability: 0
Header DbId: egs
DbLabel: Engineering Source
An: 11854683
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
IllustrationInfo
Items – Name: Title
  Label: Title
  Group: Ti
  Data: InGaN multiple quantum well laser diodes grown by molecular beam epitaxy.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AR" term="%22Hooper%2C+S%2EE%2E%22">Hooper, S.E.</searchLink><br /><searchLink fieldCode="AR" term="%22Kauer%2C+M%2E%22">Kauer, M.</searchLink><br /><searchLink fieldCode="AR" term="%22Bousquet%2C+V%2E%22">Bousquet, V.</searchLink><br /><searchLink fieldCode="AR" term="%22Johnson%2C+K%2E%22">Johnson, K.</searchLink><br /><searchLink fieldCode="AR" term="%22Barnes%2C+J%2EM%2E%22">Barnes, J.M.</searchLink><br /><searchLink fieldCode="AR" term="%22Hefferman%2C+J%2E%22">Hefferman, J.</searchLink>
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22Electronics+Letters+%28Institution+of+Engineering+%26+Technology%29%22">Electronics Letters (Institution of Engineering & Technology)</searchLink>. 1/8/2004, Vol. 40 Issue 1, p33-34. 2p. 1 Chart, 2 Graphs.
– Name: Subject
  Label: Subjects
  Group: Su
  Data: <searchLink fieldCode="DE" term="%22Diodes%22">Diodes</searchLink><br /><searchLink fieldCode="DE" term="%22Lasers%22">Lasers</searchLink><br /><searchLink fieldCode="DE" term="%22Molecular+beams%22">Molecular beams</searchLink><br /><searchLink fieldCode="DE" term="%22Epitaxy%22">Epitaxy</searchLink><br /><searchLink fieldCode="DE" term="%22Molecular+dynamics%22">Molecular dynamics</searchLink><br /><searchLink fieldCode="DE" term="%22Electronics%22">Electronics</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: The first InGaN multiple quantum well laser diodes produced by molecular beam epitaxy are reported. Ridge waveguide lasers have been demonstrated at room temperature under pulsed current injection conditions. The lasers emit at a wavelength of approximately 400 nm with a spectral line-width of less than 0.2 nm, and a threshold current density of ∼30 kA cm[sup -2]. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Electronics Letters (Institution of Engineering & Technology) is the property of Institution of Engineering & Technology and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=egs&AN=11854683
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1049/el:20040015
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 2
        StartPage: 33
    Subjects:
      – SubjectFull: Diodes
        Type: general
      – SubjectFull: Lasers
        Type: general
      – SubjectFull: Molecular beams
        Type: general
      – SubjectFull: Epitaxy
        Type: general
      – SubjectFull: Molecular dynamics
        Type: general
      – SubjectFull: Electronics
        Type: general
    Titles:
      – TitleFull: InGaN multiple quantum well laser diodes grown by molecular beam epitaxy.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Hooper, S.E.
      – PersonEntity:
          Name:
            NameFull: Kauer, M.
      – PersonEntity:
          Name:
            NameFull: Bousquet, V.
      – PersonEntity:
          Name:
            NameFull: Johnson, K.
      – PersonEntity:
          Name:
            NameFull: Barnes, J.M.
      – PersonEntity:
          Name:
            NameFull: Hefferman, J.
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 08
              M: 01
              Text: 1/8/2004
              Type: published
              Y: 2004
          Identifiers:
            – Type: issn-print
              Value: 00135194
          Numbering:
            – Type: volume
              Value: 40
            – Type: issue
              Value: 1
          Titles:
            – TitleFull: Electronics Letters (Institution of Engineering & Technology)
              Type: main
ResultId 1