APA (7th ed.) Citation

Hochberg, M., Sack, M., & Mueller, G. (2016). A Test Environment for Power Semiconductor Devices Using a Gate-Boosting Circuit. IEEE Transactions on Plasma Science, 44(10, Part 1), 2030. https://doi.org/10.1109/TPS.2016.2586518

Chicago Style (17th ed.) Citation

Hochberg, Martin, Martin Sack, and Georg Mueller. "A Test Environment for Power Semiconductor Devices Using a Gate-Boosting Circuit." IEEE Transactions on Plasma Science 44, no. 10, Part 1 (2016): 2030. https://doi.org/10.1109/TPS.2016.2586518.

MLA (9th ed.) Citation

Hochberg, Martin, et al. "A Test Environment for Power Semiconductor Devices Using a Gate-Boosting Circuit." IEEE Transactions on Plasma Science, vol. 44, no. 10, Part 1, 2016, p. 2030, https://doi.org/10.1109/TPS.2016.2586518.