A Test Environment for Power Semiconductor Devices Using a Gate-Boosting Circuit.
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| Title: | A Test Environment for Power Semiconductor Devices Using a Gate-Boosting Circuit. |
|---|---|
| Authors: | Hochberg, Martin1, Sack, Martin1, Mueller, Georg1 |
| Source: | IEEE Transactions on Plasma Science. Oct2016 Part 1, Vol. 44 Issue 10, Part 1, p2030-2034. 5p. |
| Subjects: | Semiconductors, Electric circuits, Electric switchgear, Electric potential, Field-effect transistors |
| Abstract: | For semiconductor-based pulsed power generators, short turn-ON and turn-OFF times of the employed switching elements are especially in hard switching condition of advantage. In order to enhance switching speeds for standard devices under hard switching conditions, we propose a capacitively coupled gate-boosting circuit with gate-drive voltages of up to 80 V. A low inductance test circuit has been set up to evaluate different switching elements under varying driving conditions. Beside single pulse operation, the setup allows for burst mode and continuous repetitive switching. The flexible design of the setup allows for testing metal–oxide–semiconductor field-effect transistors (MOSFETs) as well as insulated-gate bipolar transistors (IGBTs). Exemplary, we show results for a SiC MOSFET and a standard IGBT. By applying 80 V gate-drive voltage, the current rise rate of the SiC MOSFET could be increased by a factor of 3.5 up to 2.6 kA/ \mu \texts . For standard IGBT devices, we achieved an eightfold increase in current rise rate up to 4.2 kA/ \mu \texts . We verified a reproducible pulse shape for over \textrm 10^\textrm 8 pulses. In addition, the gate-drive circuit is able to drive the device in 3-MHz burst mode at 250 A peak collector current. [ABSTRACT FROM AUTHOR] |
| Copyright of IEEE Transactions on Plasma Science is the property of IEEE and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
| FullText | Text: Availability: 0 |
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| Header | DbId: egs DbLabel: Engineering Source An: 118689557 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: A Test Environment for Power Semiconductor Devices Using a Gate-Boosting Circuit. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Hochberg%2C+Martin%22">Hochberg, Martin</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Sack%2C+Martin%22">Sack, Martin</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Mueller%2C+Georg%22">Mueller, Georg</searchLink><relatesTo>1</relatesTo> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22IEEE+Transactions+on+Plasma+Science%22">IEEE Transactions on Plasma Science</searchLink>. Oct2016 Part 1, Vol. 44 Issue 10, Part 1, p2030-2034. 5p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Semiconductors%22">Semiconductors</searchLink><br /><searchLink fieldCode="DE" term="%22Electric+circuits%22">Electric circuits</searchLink><br /><searchLink fieldCode="DE" term="%22Electric+switchgear%22">Electric switchgear</searchLink><br /><searchLink fieldCode="DE" term="%22Electric+potential%22">Electric potential</searchLink><br /><searchLink fieldCode="DE" term="%22Field-effect+transistors%22">Field-effect transistors</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: For semiconductor-based pulsed power generators, short turn-ON and turn-OFF times of the employed switching elements are especially in hard switching condition of advantage. In order to enhance switching speeds for standard devices under hard switching conditions, we propose a capacitively coupled gate-boosting circuit with gate-drive voltages of up to 80 V. A low inductance test circuit has been set up to evaluate different switching elements under varying driving conditions. Beside single pulse operation, the setup allows for burst mode and continuous repetitive switching. The flexible design of the setup allows for testing metal–oxide–semiconductor field-effect transistors (MOSFETs) as well as insulated-gate bipolar transistors (IGBTs). Exemplary, we show results for a SiC MOSFET and a standard IGBT. By applying 80 V gate-drive voltage, the current rise rate of the SiC MOSFET could be increased by a factor of 3.5 up to 2.6 kA/ \mu \texts . For standard IGBT devices, we achieved an eightfold increase in current rise rate up to 4.2 kA/ \mu \texts . We verified a reproducible pulse shape for over \textrm 10^\textrm 8 pulses. In addition, the gate-drive circuit is able to drive the device in 3-MHz burst mode at 250 A peak collector current. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of IEEE Transactions on Plasma Science is the property of IEEE and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1109/TPS.2016.2586518 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 5 StartPage: 2030 Subjects: – SubjectFull: Semiconductors Type: general – SubjectFull: Electric circuits Type: general – SubjectFull: Electric switchgear Type: general – SubjectFull: Electric potential Type: general – SubjectFull: Field-effect transistors Type: general Titles: – TitleFull: A Test Environment for Power Semiconductor Devices Using a Gate-Boosting Circuit. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Hochberg, Martin – PersonEntity: Name: NameFull: Sack, Martin – PersonEntity: Name: NameFull: Mueller, Georg IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 10 Text: Oct2016 Part 1 Type: published Y: 2016 Identifiers: – Type: issn-print Value: 00933813 Numbering: – Type: volume Value: 44 – Type: issue Value: 10, Part 1 Titles: – TitleFull: IEEE Transactions on Plasma Science Type: main |
| ResultId | 1 |
