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Self-Selection RRAM Cell With Sub- \mu \textA Switching Current and Robust Reliability Fabricated by High- $K$ /Metal Gate CMOS Compatible Technology.

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Bibliographic Details
Title:	Self-Selection RRAM Cell With Sub- \mu \textA Switching Current and Robust Reliability Fabricated by High- $K$ /Metal Gate CMOS Compatible Technology.
Authors:	Huang, Peng¹, Chen, Sijie¹, Zhao, Yudi¹, Chen, Bing², Gao, Bin³, Liu, Lifeng¹, Chen, Yong⁴, Zhang, Ziying⁴, Bu, Weihai⁴, Wu, Hanming⁴, Liu, Xiaoyan¹, Kang, Jinfeng¹
Source:	IEEE Transactions on Electron Devices. Nov2016, Vol. 63 Issue 11, p4295-4301. 7p.
Subjects:	CMOS memory circuits, Reliability in engineering, Random access memory, Switching circuits, Interfaces (Physical sciences)
Abstract:	A high-K/metal gate (HKMG)-stack (TiN/Al-doped-HfOx/SiO2/Si)-based bipolar resistive random access memory (RRAM) cell is proposed and fabricated by 28/20-nm HKMG CMOS compatible technology. Robust reliability behaviors (retention at 200~ ^\circ \text C > 4 \times 10^4 s and endurance $> 10^{{{5^{\vphantom {\frac {}{,}}}}}} cycles) and ultralow switching current ( <0.1\mu \textA for RESET and <0.3\mu \textA for SET) are both demonstrated. The sub- \mu \textA switching current and self-selection nonlinear $I$ – V$ characteristics are attributed to the SiO2 interfacial layer rather than the decrease of conductive filament size and oxygen vacancy ( V_{O} ) density, which can be verified by HRTEM and measured conduction behavior. Therefore, robust reliability property is also achieved. The demonstrated excellent memory characteristics of HKMG stacked RRAM cell enable constituting 1-Mb workable crosspoint array even though the feature size scales down to 10 nm according to the HSPICE simulation. [ABSTRACT FROM AUTHOR]
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Database:	Engineering Source

Description
Abstract:	A high-K/metal gate (HKMG)-stack (TiN/Al-doped-HfOx/SiO2/Si)-based bipolar resistive random access memory (RRAM) cell is proposed and fabricated by 28/20-nm HKMG CMOS compatible technology. Robust reliability behaviors (retention at 200~ ^\circ \text C > 4 \times 10^4 s and endurance $> 10^{{{5^{\vphantom {\frac {}{,}}}}}} cycles) and ultralow switching current ( <0.1\mu \textA for RESET and <0.3\mu \textA for SET) are both demonstrated. The sub- \mu \textA switching current and self-selection nonlinear $I$ – V$ characteristics are attributed to the SiO2 interfacial layer rather than the decrease of conductive filament size and oxygen vacancy ( V_{O} ) density, which can be verified by HRTEM and measured conduction behavior. Therefore, robust reliability property is also achieved. The demonstrated excellent memory characteristics of HKMG stacked RRAM cell enable constituting 1-Mb workable crosspoint array even though the feature size scales down to 10 nm according to the HSPICE simulation. [ABSTRACT FROM AUTHOR]
ISSN:	00189383
DOI:	10.1109/TED.2016.2612824