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Self-Selection RRAM Cell With Sub- \mu \textA Switching Current and Robust Reliability Fabricated by High- $K$ /Metal Gate CMOS Compatible Technology.

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Title: Self-Selection RRAM Cell With Sub- \mu \textA Switching Current and Robust Reliability Fabricated by High- $K$ /Metal Gate CMOS Compatible Technology.
Authors: Huang, Peng1, Chen, Sijie1, Zhao, Yudi1, Chen, Bing2, Gao, Bin3, Liu, Lifeng1, Chen, Yong4, Zhang, Ziying4, Bu, Weihai4, Wu, Hanming4, Liu, Xiaoyan1, Kang, Jinfeng1
Source: IEEE Transactions on Electron Devices. Nov2016, Vol. 63 Issue 11, p4295-4301. 7p.
Subjects: CMOS memory circuits, Reliability in engineering, Random access memory, Switching circuits, Interfaces (Physical sciences)
Abstract: A high-K/metal gate (HKMG)-stack (TiN/Al-doped-HfOx/SiO2/Si)-based bipolar resistive random access memory (RRAM) cell is proposed and fabricated by 28/20-nm HKMG CMOS compatible technology. Robust reliability behaviors (retention at 200~ ^\circ \text C > 4 \times 10^4 s and endurance $> 10^{{{5^{\vphantom {\frac {}{,}}}}}} cycles) and ultralow switching current ( <0.1\mu \textA for RESET and <0.3\mu \textA for SET) are both demonstrated. The sub- \mu \textA switching current and self-selection nonlinear $I$ – V$ characteristics are attributed to the SiO2 interfacial layer rather than the decrease of conductive filament size and oxygen vacancy ( V_{O} ) density, which can be verified by HRTEM and measured conduction behavior. Therefore, robust reliability property is also achieved. The demonstrated excellent memory characteristics of HKMG stacked RRAM cell enable constituting 1-Mb workable crosspoint array even though the feature size scales down to 10 nm according to the HSPICE simulation. [ABSTRACT FROM AUTHOR]
Copyright of IEEE Transactions on Electron Devices is the property of IEEE and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Data: Self-Selection RRAM Cell With Sub- \mu \textA Switching Current and Robust Reliability Fabricated by High- $K$ /Metal Gate CMOS Compatible Technology.
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  Data: A high-K/metal gate (HKMG)-stack (TiN/Al-doped-HfOx/SiO2/Si)-based bipolar resistive random access memory (RRAM) cell is proposed and fabricated by 28/20-nm HKMG CMOS compatible technology. Robust reliability behaviors (retention at 200~ ^\circ \text C &gt; 4 \times 10^4 s and endurance $&gt; 10^{{{5^{\vphantom {\frac {}{,}}}}}} cycles) and ultralow switching current ( &lt;0.1\mu \textA for RESET and &lt;0.3\mu \textA for SET) are both demonstrated. The sub- \mu \textA switching current and self-selection nonlinear $I$ – V$ characteristics are attributed to the SiO2 interfacial layer rather than the decrease of conductive filament size and oxygen vacancy ( V_{O} ) density, which can be verified by HRTEM and measured conduction behavior. Therefore, robust reliability property is also achieved. The demonstrated excellent memory characteristics of HKMG stacked RRAM cell enable constituting 1-Mb workable crosspoint array even though the feature size scales down to 10 nm according to the HSPICE simulation. [ABSTRACT FROM AUTHOR]
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  Data: &lt;i&gt;Copyright of IEEE Transactions on Electron Devices is the property of IEEE and its content may not be copied or emailed to multiple sites without the copyright holder&#39;s express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.&lt;/i&gt; (Copyright applies to all Abstracts.)
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        Value: 10.1109/TED.2016.2612824
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