Metastable Tantalum Oxide Formation During the Devitrification of Amorphous Tantalum Thin Films.

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Title: Metastable Tantalum Oxide Formation During the Devitrification of Amorphous Tantalum Thin Films.
Authors: Donaldson, Olivia K.1, Hattar, Khalid2, Trelewicz, Jason R.1 jason.trelewicz@stonybrook.edu, Johnson, E. I. C.
Source: Journal of the American Ceramic Society. Nov2016, Vol. 99 Issue 11, p3775-3783. 9p. 2 Black and White Photographs, 6 Graphs.
Subjects: Tantalum oxide, Devitrification, Amorphous substances, Tantalum films, Microstructure
Abstract: Microstructural evolution during the devitrification of amorphous tantalum thin films synthesized via pulsed laser deposition was investigated using in situ transmission electron microscopy (TEM) combined with ex situ isothermal annealing, bright-field imaging, and electron-diffraction analysis. The phases formed during crystallization and their stability were characterized as a function of the chamber pressure during deposition, devitrification temperature, and annealing time. A range of metastable nanocrystalline tantalum oxides were identified following devitrification including multiple orthorhombic oxide phases, which often were present with, or evolved to, the tetragonal TaO2 phase. While the appearance of these phases indicated the films were evolving to the stable form of tantalum oxide--monoclinic tantalum pentoxide--it was likely not achieved for the conditions considered due to an insufficient amount of oxygen present in the films following deposition. Nevertheless, the collective in situ and ex situ TEM analysis applied to thin film samples enabled the isolation of a number of metastable tantalum oxides. New insights were gained into the transformation sequence and stability of these nanocrystalline phases, which presents opportunities for the development of advanced tantalum oxide-based dielectric materials for novel memristor designs. [ABSTRACT FROM AUTHOR]
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Abstract:Microstructural evolution during the devitrification of amorphous tantalum thin films synthesized via pulsed laser deposition was investigated using in situ transmission electron microscopy (TEM) combined with ex situ isothermal annealing, bright-field imaging, and electron-diffraction analysis. The phases formed during crystallization and their stability were characterized as a function of the chamber pressure during deposition, devitrification temperature, and annealing time. A range of metastable nanocrystalline tantalum oxides were identified following devitrification including multiple orthorhombic oxide phases, which often were present with, or evolved to, the tetragonal TaO2 phase. While the appearance of these phases indicated the films were evolving to the stable form of tantalum oxide--monoclinic tantalum pentoxide--it was likely not achieved for the conditions considered due to an insufficient amount of oxygen present in the films following deposition. Nevertheless, the collective in situ and ex situ TEM analysis applied to thin film samples enabled the isolation of a number of metastable tantalum oxides. New insights were gained into the transformation sequence and stability of these nanocrystalline phases, which presents opportunities for the development of advanced tantalum oxide-based dielectric materials for novel memristor designs. [ABSTRACT FROM AUTHOR]
ISSN:00027820
DOI:10.1111/jace.14384