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Systematic method for electrical characterization of random telegraph noise in MOSFETs.

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Title: Systematic method for electrical characterization of random telegraph noise in MOSFETs.
Authors: Marquez, Carlos1, Rodriguez, Noel1, Gamiz, Francisco1, Ohata, Akiko2
Source: Solid-State Electronics. Feb2017, Vol. 128, p115-120. 6p.
Subjects: Burst noise, Algorithm research
Abstract: This work introduces a new protocol which aims to facilitate massive on-wafer characterization of Random Telegraph Noise (RTN) in MOS transistors. The methodology combines the noise spectral density scanning by gate bias assisted with a modified Weighted Time Lag Plot algorithm to identify unequivocally the single-trap RTN signals in optimum bias conditions for their electrical characterization. The strength of the method is demonstrated by its application for monitoring the distribution of traps over the transistors of a SOI wafer. The influence of the back-gate bias on the RTN characteristics of the SOI devices with coupled front- and back-interfaces has revealed unusual characteristics compatible with the carrier emission to the gate metal contact. [ABSTRACT FROM AUTHOR]
Copyright of Solid-State Electronics is the property of Pergamon Press - An Imprint of Elsevier Science and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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Header DbId: egs
DbLabel: Engineering Source
An: 120403066
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Systematic method for electrical characterization of random telegraph noise in MOSFETs.
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  Data: <searchLink fieldCode="AR" term="%22Marquez%2C+Carlos%22">Marquez, Carlos</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Rodriguez%2C+Noel%22">Rodriguez, Noel</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Gamiz%2C+Francisco%22">Gamiz, Francisco</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Ohata%2C+Akiko%22">Ohata, Akiko</searchLink><relatesTo>2</relatesTo>
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  Data: <searchLink fieldCode="JN" term="%22Solid-State+Electronics%22">Solid-State Electronics</searchLink>. Feb2017, Vol. 128, p115-120. 6p.
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  Data: This work introduces a new protocol which aims to facilitate massive on-wafer characterization of Random Telegraph Noise (RTN) in MOS transistors. The methodology combines the noise spectral density scanning by gate bias assisted with a modified Weighted Time Lag Plot algorithm to identify unequivocally the single-trap RTN signals in optimum bias conditions for their electrical characterization. The strength of the method is demonstrated by its application for monitoring the distribution of traps over the transistors of a SOI wafer. The influence of the back-gate bias on the RTN characteristics of the SOI devices with coupled front- and back-interfaces has revealed unusual characteristics compatible with the carrier emission to the gate metal contact. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
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  Data: <i>Copyright of Solid-State Electronics is the property of Pergamon Press - An Imprint of Elsevier Science and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
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      – Type: doi
        Value: 10.1016/j.sse.2016.10.031
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      – Code: eng
        Text: English
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        PageCount: 6
        StartPage: 115
    Subjects:
      – SubjectFull: Burst noise
        Type: general
      – SubjectFull: Algorithm research
        Type: general
    Titles:
      – TitleFull: Systematic method for electrical characterization of random telegraph noise in MOSFETs.
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            NameFull: Marquez, Carlos
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            NameFull: Rodriguez, Noel
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            NameFull: Gamiz, Francisco
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            NameFull: Ohata, Akiko
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              Text: Feb2017
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              Y: 2017
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              Value: 128
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            – TitleFull: Solid-State Electronics
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