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Efficient EM Simulation of GCPW Structures Applied to a 200-GHz mHEMT Power Amplifier MMIC.

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Title: Efficient EM Simulation of GCPW Structures Applied to a 200-GHz mHEMT Power Amplifier MMIC.
Authors: Campos-Roca, Yolanda1 ycampos@unex.es, Amado-Rey, Belén2, Wagner, Sandrine2, Leuther, Arnulf2, Bangert, Axel3, Gómez-Alcalá, Rafael1, Tessmann, Axel2
Source: Journal of Infrared, Millimeter & Terahertz Waves. May2017, Vol. 38 Issue 5, p596-608. 13p.
Subjects: Electromagnetism, Simulation methods & models, Coplanar waveguides, Power amplifiers, Transistors
Abstract: The behaviour of grounded coplanar waveguide (GCPW) structures in the upper millimeter-wave range is analyzed by using full-wave electromagnetic (EM) simulations. A methodological approach to develop reliable and time-efficient simulations is proposed by investigating the impact of different simplifications in the EM modelling and simulation conditions. After experimental validation with measurements on test structures, this approach has been used to model the most critical passive structures involved in the layout of a state-of-the-art 200-GHz power amplifier based on metamorphic high electron mobility transistors (mHEMTs). This millimeter-wave monolithic integrated circuit (MMIC) has demonstrated a measured output power of 8.7 dBm for an input power of 0 dBm at 200 GHz. The measured output power density and power-added efficiency (PAE) are 46.3 mW/mm and 4.5 %, respectively. The peak measured small-signal gain is 12.7 dB (obtained at 196 GHz). A good agreement has been obtained between measurements and simulation results. [ABSTRACT FROM AUTHOR]
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Database: Engineering Source
Description
Abstract:The behaviour of grounded coplanar waveguide (GCPW) structures in the upper millimeter-wave range is analyzed by using full-wave electromagnetic (EM) simulations. A methodological approach to develop reliable and time-efficient simulations is proposed by investigating the impact of different simplifications in the EM modelling and simulation conditions. After experimental validation with measurements on test structures, this approach has been used to model the most critical passive structures involved in the layout of a state-of-the-art 200-GHz power amplifier based on metamorphic high electron mobility transistors (mHEMTs). This millimeter-wave monolithic integrated circuit (MMIC) has demonstrated a measured output power of 8.7 dBm for an input power of 0 dBm at 200 GHz. The measured output power density and power-added efficiency (PAE) are 46.3 mW/mm and 4.5 %, respectively. The peak measured small-signal gain is 12.7 dB (obtained at 196 GHz). A good agreement has been obtained between measurements and simulation results. [ABSTRACT FROM AUTHOR]
ISSN:18666892
DOI:10.1007/s10762-017-0359-0