Investigation of irradiated monolithic transistors for space applications
Saved in:
| Title: | Investigation of irradiated monolithic transistors for space applications |
|---|---|
| Authors: | Codegoni, D.1, Colder, A.2, Croitoru, N.1,3, D’Angelo, P.1, DeMarchi, M.1,4, Fallica, G.5, Favalli, A.1, Leonardi, S.5, Levalois, M.2, Marie, P.2, Modica, R.5, Rancoita, P.G.1 piergiorgio.rancoita@mib.infn.it, Seidman, A.1,3 |
| Source: | Nuclear Instruments & Methods in Physics Research Section B. Mar2004, Vol. 217 Issue 1, p65. 12p. |
| Subjects: | Astrophysical radiation, Electronics, Neutrons, Bipolar transistors |
| Abstract: | In this paper experimental results on radiation effects on a BICMOS high speed commercial technology, manufactured by STMicroelectronics, are reported. Bipolar transistors were irradiated by neutrons, ions, or by both of them. Fast neutrons, as well as other types of particles, produce defects, mainly by displacing silicon atoms from their lattice positions to interstitial locations, i.e. generating vacancy-interstitial pairs, the so-called Frenkel pairs (FP). Defects introduce trapping energy states which degrade the common emitter current gain |
| Copyright of Nuclear Instruments & Methods in Physics Research Section B is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
Be the first to leave a comment!
