Bibliographic Details
| Title: |
Single-step inductively coupled plasma etching of sputtered Nb2O5/SiO2 multilayer stacks using chromium etch mask. |
| Authors: |
Taimoor, Muhammad1 taimoor@ina.uni-kassel.de, Alatawi, Abdullah1, Reuter, Sabrina1, Hillmer, Hartmut1, Kusserow, Thomas1 |
| Source: |
Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films. Jul/Aug2017, Vol. 35 Issue 4, p1-5. 5p. |
| Subjects: |
Plasma etching, Ion beams, Sputtering (Physics), Dielectric materials, Chromium, Sedimentation & deposition |
| Abstract: |
This paper presents the dry etching characteristics of Nb2O5/SiO2 multilayer stacks deposited using ion beam sputtering. Dry etching is achieved by using a combination of CHF3 and Ar gases in an inductively coupled plasma (ICP)-reactive ion etching system. The effect of the etching parameters such as the gas ratio (CHF3/Ar), radio-frequency power, ICP power, chamber pressure, and temperature is investigated. An etching recipe is optimized to achieve a high etch rate, good selectivity, and optimum etch profile. The optimized etching recipe provides a single step etch solution for both dielectric materials. Furthermore, the deposition and structuring process of a chromium based etch mask is investigated. [ABSTRACT FROM AUTHOR] |
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| Database: |
Engineering Source |
