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Single-step inductively coupled plasma etching of sputtered Nb2O5/SiO2 multilayer stacks using chromium etch mask.

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Title: Single-step inductively coupled plasma etching of sputtered Nb2O5/SiO2 multilayer stacks using chromium etch mask.
Authors: Taimoor, Muhammad1 taimoor@ina.uni-kassel.de, Alatawi, Abdullah1, Reuter, Sabrina1, Hillmer, Hartmut1, Kusserow, Thomas1
Source: Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films. Jul/Aug2017, Vol. 35 Issue 4, p1-5. 5p.
Subjects: Plasma etching, Ion beams, Sputtering (Physics), Dielectric materials, Chromium, Sedimentation & deposition
Abstract: This paper presents the dry etching characteristics of Nb2O5/SiO2 multilayer stacks deposited using ion beam sputtering. Dry etching is achieved by using a combination of CHF3 and Ar gases in an inductively coupled plasma (ICP)-reactive ion etching system. The effect of the etching parameters such as the gas ratio (CHF3/Ar), radio-frequency power, ICP power, chamber pressure, and temperature is investigated. An etching recipe is optimized to achieve a high etch rate, good selectivity, and optimum etch profile. The optimized etching recipe provides a single step etch solution for both dielectric materials. Furthermore, the deposition and structuring process of a chromium based etch mask is investigated. [ABSTRACT FROM AUTHOR]
Copyright of Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films is the property of American Institute of Physics and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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DbLabel: Engineering Source
An: 124036259
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PubTypeId: academicJournal
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  Data: Single-step inductively coupled plasma etching of sputtered Nb<subscript>2</subscript>O<subscript>5</subscript>/SiO<subscript>2</subscript> multilayer stacks using chromium etch mask.
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  Data: <searchLink fieldCode="AR" term="%22Taimoor%2C+Muhammad%22">Taimoor, Muhammad</searchLink><relatesTo>1</relatesTo><i> taimoor@ina.uni-kassel.de</i><br /><searchLink fieldCode="AR" term="%22Alatawi%2C+Abdullah%22">Alatawi, Abdullah</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Reuter%2C+Sabrina%22">Reuter, Sabrina</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Hillmer%2C+Hartmut%22">Hillmer, Hartmut</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Kusserow%2C+Thomas%22">Kusserow, Thomas</searchLink><relatesTo>1</relatesTo>
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Vacuum+Science+%26+Technology%3A+Part+A-Vacuums%2C+Surfaces+%26+Films%22">Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films</searchLink>. Jul/Aug2017, Vol. 35 Issue 4, p1-5. 5p.
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  Data: <searchLink fieldCode="DE" term="%22Plasma+etching%22">Plasma etching</searchLink><br /><searchLink fieldCode="DE" term="%22Ion+beams%22">Ion beams</searchLink><br /><searchLink fieldCode="DE" term="%22Sputtering+%28Physics%29%22">Sputtering (Physics)</searchLink><br /><searchLink fieldCode="DE" term="%22Dielectric+materials%22">Dielectric materials</searchLink><br /><searchLink fieldCode="DE" term="%22Chromium%22">Chromium</searchLink><br /><searchLink fieldCode="DE" term="%22Sedimentation+%26+deposition%22">Sedimentation & deposition</searchLink>
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  Data: This paper presents the dry etching characteristics of Nb2O5/SiO2 multilayer stacks deposited using ion beam sputtering. Dry etching is achieved by using a combination of CHF3 and Ar gases in an inductively coupled plasma (ICP)-reactive ion etching system. The effect of the etching parameters such as the gas ratio (CHF3/Ar), radio-frequency power, ICP power, chamber pressure, and temperature is investigated. An etching recipe is optimized to achieve a high etch rate, good selectivity, and optimum etch profile. The optimized etching recipe provides a single step etch solution for both dielectric materials. Furthermore, the deposition and structuring process of a chromium based etch mask is investigated. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films is the property of American Institute of Physics and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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    Identifiers:
      – Type: doi
        Value: 10.1116/1.4983683
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      – Code: eng
        Text: English
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      Pagination:
        PageCount: 5
        StartPage: 1
    Subjects:
      – SubjectFull: Plasma etching
        Type: general
      – SubjectFull: Ion beams
        Type: general
      – SubjectFull: Sputtering (Physics)
        Type: general
      – SubjectFull: Dielectric materials
        Type: general
      – SubjectFull: Chromium
        Type: general
      – SubjectFull: Sedimentation & deposition
        Type: general
    Titles:
      – TitleFull: Single-step inductively coupled plasma etching of sputtered Nb2O5/SiO2 multilayer stacks using chromium etch mask.
        Type: main
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          Name:
            NameFull: Taimoor, Muhammad
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            NameFull: Alatawi, Abdullah
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            NameFull: Reuter, Sabrina
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            NameFull: Hillmer, Hartmut
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            NameFull: Kusserow, Thomas
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            – D: 01
              M: 07
              Text: Jul/Aug2017
              Type: published
              Y: 2017
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              Value: 35
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              Value: 4
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            – TitleFull: Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films
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