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A K-Band Low-Power Phase Shifter Based on Injection Locked Oscillator in 0.13 μm CMOS Technology.

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Title: A K-Band Low-Power Phase Shifter Based on Injection Locked Oscillator in 0.13 μm CMOS Technology.
Authors: Qiu, Qi-Lin1, Yu, Xiao-Peng1 xpyu@pmail.ntu.edu.sg, Sui, Wen-Quan1
Source: Journal of Infrared, Millimeter & Terahertz Waves. Nov2017, Vol. 38 Issue 11, p1368-1386. 19p.
Subjects: Injection locked oscillators, Complementary metal oxide semiconductors, Phase shifters, Energy consumption, Voltage-controlled oscillators
Abstract: In this paper, the design challenges of the injection-locked oscillator (ILO)-based phase shifter are reviewed and analyzed. The key design considerations such as the operating frequency, locking range, and linearity of the phase shifters are analysed in detail. It is possible to optimize the phase shifter in certain parameters such as ultra-low power while meeting the requirements of a certain system. As a design example, a K-band phase shifter is implemented using a commercial 0.13 μm CMOS technology, where a conventional LC tank based topology is implemented but optimised with a good balance among power consumption, working range, sensitivity, and silicon area, etc. Measurement results show that the proposed phase shift is able to work at 22-23.4 GHz with a range of 180 while consuming 3.14 mW from a 1.2 V supply voltage. [ABSTRACT FROM AUTHOR]
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Database: Engineering Source
Description
Abstract:In this paper, the design challenges of the injection-locked oscillator (ILO)-based phase shifter are reviewed and analyzed. The key design considerations such as the operating frequency, locking range, and linearity of the phase shifters are analysed in detail. It is possible to optimize the phase shifter in certain parameters such as ultra-low power while meeting the requirements of a certain system. As a design example, a K-band phase shifter is implemented using a commercial 0.13 μm CMOS technology, where a conventional LC tank based topology is implemented but optimised with a good balance among power consumption, working range, sensitivity, and silicon area, etc. Measurement results show that the proposed phase shift is able to work at 22-23.4 GHz with a range of 180 while consuming 3.14 mW from a 1.2 V supply voltage. [ABSTRACT FROM AUTHOR]
ISSN:18666892
DOI:10.1007/s10762-017-0424-8