Bibliographic Details
| Title: |
Statistical Deviations From the Theoretical Only-SBU Model to Estimate MCU Rates in SRAMs. |
| Authors: |
Franco, Francisco J.1, Clemente, Juan Antonio2, Baylac, Maud3, Rey, Solenne3, Villa, Francesca3, Mecha, Hortensia2, Agapito, Juan A.1, Puchner, Helmut4, Hubert, Guillaume5, Velazco, Raoul6 |
| Source: |
IEEE Transactions on Nuclear Science. Aug2017, Vol. 64 Issue 8 Part 1, p2152-2160. 9p. |
| Subjects: |
Static random access memory chips, Integrated memory circuits, Static random access memory, Programming languages, Electronic data processing |
| Abstract: |
This paper addresses a well-known problem that occurs when memories are exposed to radiation: the determination if a bit flip is isolated or if it belongs to a multiple event. As it is unusual to know the physical layout of the memory, this paper proposes to evaluate the statistical properties of the sets of corrupted addresses and to compare the results with a mathematical prediction model where all of the events are single bit upsets. A set of rules easy to implement in common programming languages can be iteratively applied if anomalies are observed, thus yielding a classification of errors quite closer to reality (more than 80% accuracy in our experiments). [ABSTRACT FROM PUBLISHER] |
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| Database: |
Engineering Source |
