View in EDS

Influence of MOCVD Growth Pressure on Magnetoresistance of Nanostructured La-Ca-Mn-O Films Used for Magnetic Field Sensors.

Saved in:
Bibliographic Details
Title: Influence of MOCVD Growth Pressure on Magnetoresistance of Nanostructured La-Ca-Mn-O Films Used for Magnetic Field Sensors.
Authors: Zurauskiene, Nerija1, Pavilonis, Dainius1, Klimantavicius, Jonas1, Balevicius, Saulius1, Stankevic, Voitech1, Kersulis, Skirmantas1, Plausinaitiene, Valentina1, Abrutis, Adulfas2, Lukose, Rasuole1, Skapas, Martynas1, Juskenas, Remigijus1, Knasiene, Birute1, Naujalis, Evaldas1, Law, Joseph M.3
Source: IEEE Transactions on Plasma Science. Oct2017 Part 1, Vol. 45 Issue 10, Part 1, p2780-2786. 7p.
Subjects: Magnetic properties of lanthanum strontium manganese oxide, Magnetoresistance, Nanostructured materials, Magnetic properties of thin films, Metal organic chemical vapor deposition, Paramagnetism, Phase transitions, Temperature sensors
Abstract: The results of structure and magnetoresistance (MR) of nanostructured La1–xCaxMnyO3 (LCMO) films, grown at different gas pressure (from 3 to 7 Torr) by pulse injection metal–organic chemical vapor deposition (MOCVD) technique, are presented. The MR was investigated in pulsed magnetic fields up to 60 T in the temperature range 1.5–294 K. The results were analyzed from the perspective of using these films for magnetic field sensors operating at low temperatures. It was demonstrated that with the increase of Ar + O2 gas pressure, the surface morphology of the films becomes rougher and grain size increases. Also, the ratio of Mn/(La + Ca) increases with the increase of the pressure. Large MR of the films was observed in a wide temperature range below the ferromagnetic–paramagnetic phase transition. It was shown that at cryogenic temperatures, the films grown at gas pressure of 3 Torr have higher sensitivity in lower magnetic field range (<10 T), while in high magnetic fields (20–60 T), the properties of films grown at higher gas pressure 5–7 Torr are favored. The obtained results allow evaluating the influence of MOCVD growth pressure on MR and sensitivity to the magnetic field of LCMO manganites used for pulsed magnetic field sensors. [ABSTRACT FROM PUBLISHER]
Copyright of IEEE Transactions on Plasma Science is the property of IEEE and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
Description
Abstract:The results of structure and magnetoresistance (MR) of nanostructured La1–xCaxMnyO3 (LCMO) films, grown at different gas pressure (from 3 to 7 Torr) by pulse injection metal–organic chemical vapor deposition (MOCVD) technique, are presented. The MR was investigated in pulsed magnetic fields up to 60 T in the temperature range 1.5–294 K. The results were analyzed from the perspective of using these films for magnetic field sensors operating at low temperatures. It was demonstrated that with the increase of Ar + O2 gas pressure, the surface morphology of the films becomes rougher and grain size increases. Also, the ratio of Mn/(La + Ca) increases with the increase of the pressure. Large MR of the films was observed in a wide temperature range below the ferromagnetic–paramagnetic phase transition. It was shown that at cryogenic temperatures, the films grown at gas pressure of 3 Torr have higher sensitivity in lower magnetic field range (<10 T), while in high magnetic fields (20–60 T), the properties of films grown at higher gas pressure 5–7 Torr are favored. The obtained results allow evaluating the influence of MOCVD growth pressure on MR and sensitivity to the magnetic field of LCMO manganites used for pulsed magnetic field sensors. [ABSTRACT FROM PUBLISHER]
ISSN:00933813
DOI:10.1109/TPS.2017.2711032