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Insights on the Body Charging and Noise Generation by Impact Ionization in Fully Depleted SOI MOSFETs.

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Bibliographic Details
Title: Insights on the Body Charging and Noise Generation by Impact Ionization in Fully Depleted SOI MOSFETs.
Authors: Marquez, Carlos1, Rodriguez, Noel1, Gamiz, Francisco1, Ohata, Akiko2
Source: IEEE Transactions on Electron Devices. Dec2017, Vol. 64 Issue 12, p5093-5098. 6p.
Subjects: Metal oxide semiconductor field-effect transistors, Ionization energy, Force & energy, Electron affinity, Transistors
Abstract: Thin and ultrathin body-contacted Silicon-on-Insulator MOS-transistors have been used for the direct experimental measurement of the stationary body potential and impact ionization current generated at moderate and high electric field regimes. The large influence of the channel length on the evolution of the body potential as well as the severe loss of electrostatic control of the body by the gate terminal due to the hole injection have been successfully monitored through the body-contact. In our short devices, the impact ionization current tends to saturate as the gate bias increases for high values of the drain bias, whereas the impact ionization ratio has been found to be larger at low inversion charge. At moderate impact ionization regime, an update set of experimentally extracted ionization coefficients have been proposed revealing significant differences with the ones used in bulk technologies. Finally, low-frequency noise characterization has shown the impact ionization contribution to the fluctuation of the drain current. The power spectral density of the noise at the body-contact of the transistor has revealed the signature of the parasitic bipolar triggering at high impact ionization regime. [ABSTRACT FROM AUTHOR]
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Database: Engineering Source
Description
Abstract:Thin and ultrathin body-contacted Silicon-on-Insulator MOS-transistors have been used for the direct experimental measurement of the stationary body potential and impact ionization current generated at moderate and high electric field regimes. The large influence of the channel length on the evolution of the body potential as well as the severe loss of electrostatic control of the body by the gate terminal due to the hole injection have been successfully monitored through the body-contact. In our short devices, the impact ionization current tends to saturate as the gate bias increases for high values of the drain bias, whereas the impact ionization ratio has been found to be larger at low inversion charge. At moderate impact ionization regime, an update set of experimentally extracted ionization coefficients have been proposed revealing significant differences with the ones used in bulk technologies. Finally, low-frequency noise characterization has shown the impact ionization contribution to the fluctuation of the drain current. The power spectral density of the noise at the body-contact of the transistor has revealed the signature of the parasitic bipolar triggering at high impact ionization regime. [ABSTRACT FROM AUTHOR]
ISSN:00189383
DOI:10.1109/TED.2017.2762733