DIAGNOSTIC TECHNIQUE SELECTION FOR SRAM LOGIC TYPE FAILURES.
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| Title: | DIAGNOSTIC TECHNIQUE SELECTION FOR SRAM LOGIC TYPE FAILURES. |
|---|---|
| Authors: | Zhigang Song1 zhigang.song@globalfoundries.com, Safran, Laura1 |
| Source: | Electronic Device Failure Analysis. May2018, Vol. 20 Issue 2, p18-24. 7p. |
| Subjects: | Static random access memory, Static random access memory chips, Electrical engineering, Failure analysis, Digital electronics |
| Abstract: | The article reports that static random access memory (SRAM) is of ten chosen as the process qualification vehicle during technology development, and consequently, failure analysis of SRAM is the main feedback for process improvement and yield learning. SRAM is dense and has small features, its functionality is sensitive to process variation. |
| Database: | Engineering Source |
| FullText | Links: – Type: pdflink Text: Availability: 0 |
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| Header | DbId: egs DbLabel: Engineering Source An: 129248195 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: DIAGNOSTIC TECHNIQUE SELECTION FOR SRAM LOGIC TYPE FAILURES. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Zhigang+Song%22">Zhigang Song</searchLink><relatesTo>1</relatesTo><i> zhigang.song@globalfoundries.com</i><br /><searchLink fieldCode="AR" term="%22Safran%2C+Laura%22">Safran, Laura</searchLink><relatesTo>1</relatesTo> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Electronic+Device+Failure+Analysis%22">Electronic Device Failure Analysis</searchLink>. May2018, Vol. 20 Issue 2, p18-24. 7p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Static+random+access+memory%22">Static random access memory</searchLink><br /><searchLink fieldCode="DE" term="%22Static+random+access+memory+chips%22">Static random access memory chips</searchLink><br /><searchLink fieldCode="DE" term="%22Electrical+engineering%22">Electrical engineering</searchLink><br /><searchLink fieldCode="DE" term="%22Failure+analysis%22">Failure analysis</searchLink><br /><searchLink fieldCode="DE" term="%22Digital+electronics%22">Digital electronics</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: The article reports that static random access memory (SRAM) is of ten chosen as the process qualification vehicle during technology development, and consequently, failure analysis of SRAM is the main feedback for process improvement and yield learning. SRAM is dense and has small features, its functionality is sensitive to process variation. |
| PLink | https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=egs&AN=129248195 |
| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.31399/asm.edfa.2018-2.p018 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 7 StartPage: 18 Subjects: – SubjectFull: Static random access memory Type: general – SubjectFull: Static random access memory chips Type: general – SubjectFull: Electrical engineering Type: general – SubjectFull: Failure analysis Type: general – SubjectFull: Digital electronics Type: general Titles: – TitleFull: DIAGNOSTIC TECHNIQUE SELECTION FOR SRAM LOGIC TYPE FAILURES. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Zhigang Song – PersonEntity: Name: NameFull: Safran, Laura IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 05 Text: May2018 Type: published Y: 2018 Identifiers: – Type: issn-print Value: 15370755 Numbering: – Type: volume Value: 20 – Type: issue Value: 2 Titles: – TitleFull: Electronic Device Failure Analysis Type: main |
| ResultId | 1 |