Bibliographic Details
| Title: |
High Bandwidth and Low-Leakage Current Inp-In0.53Ga0.47As-InP DBHTs on GaAs Substrates. |
| Authors: |
Kim, Y.M.1 kymdow@ece.ucsb.edu, Griffith, Z.1, Rodwell, M.J.W.1, Gossard, A.C.1 |
| Source: |
IEEE Electron Device Letters. Apr2004, Vol. 25 Issue 4, p170-172. 3p. 1 Chart, 5 Graphs. |
| Subjects: |
Bipolar transistors, Heterojunctions, Broadband communication systems, Electric breakdown, Electric conductivity, Data transmission systems |
| Abstract: |
InP-In0.53Ga0.47As-InP double heterojunction bipolar transistors (DHBTs) were grown on GaAs substrates. A 284-GHz power-gain cutoff frequency fmax and a 216-GHz current-gain cutoff frequency fτ were obtained, presently the highest reported values for metamorphic HBTs. The breakdown voltage BVCEO was > 5 V while the dc current gain β was 21. High thermal conductivity InP metamorphic buffer layers were employed in order to minimize the device thermal resistance. [ABSTRACT FROM AUTHOR] |
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| Database: |
Engineering Source |
