APA (7th ed.) Citation

Kim, Y., Griffith, Z., Rodwell, M., & Gossard, A. (2004). High Bandwidth and Low-Leakage Current Inp-In0.53Ga0.47As-InP DBHTs on GaAs Substrates. IEEE Electron Device Letters, 25(4), 170. https://doi.org/10.1109/LED.2004.825198

Chicago Style (17th ed.) Citation

Kim, Y.M, Z. Griffith, M.J.W Rodwell, and A.C Gossard. "High Bandwidth and Low-Leakage Current Inp-In0.53Ga0.47As-InP DBHTs on GaAs Substrates." IEEE Electron Device Letters 25, no. 4 (2004): 170. https://doi.org/10.1109/LED.2004.825198.

MLA (9th ed.) Citation

Kim, Y.M, et al. "High Bandwidth and Low-Leakage Current Inp-In0.53Ga0.47As-InP DBHTs on GaAs Substrates." IEEE Electron Device Letters, vol. 25, no. 4, 2004, p. 170, https://doi.org/10.1109/LED.2004.825198.