High Bandwidth and Low-Leakage Current Inp-In0.53Ga0.47As-InP DBHTs on GaAs Substrates.
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| Title: | High Bandwidth and Low-Leakage Current Inp-In |
|---|---|
| Authors: | Kim, Y.M.1 kymdow@ece.ucsb.edu, Griffith, Z.1, Rodwell, M.J.W.1, Gossard, A.C.1 |
| Source: | IEEE Electron Device Letters. Apr2004, Vol. 25 Issue 4, p170-172. 3p. 1 Chart, 5 Graphs. |
| Subjects: | Bipolar transistors, Heterojunctions, Broadband communication systems, Electric breakdown, Electric conductivity, Data transmission systems |
| Abstract: | InP-In0.53Ga0.47As-InP double heterojunction bipolar transistors (DHBTs) were grown on GaAs substrates. A 284-GHz power-gain cutoff frequency fmax and a 216-GHz current-gain cutoff frequency fτ were obtained, presently the highest reported values for metamorphic HBTs. The breakdown voltage BVCEO was > 5 V while the dc current gain β was 21. High thermal conductivity InP metamorphic buffer layers were employed in order to minimize the device thermal resistance. [ABSTRACT FROM AUTHOR] |
| Copyright of IEEE Electron Device Letters is the property of IEEE and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
| FullText | Text: Availability: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: High Bandwidth and Low-Leakage Current Inp-In<subscript>0.53</subscript>Ga<subscript>0.47</subscript>As-InP DBHTs on GaAs Substrates. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Kim%2C+Y%2EM%2E%22">Kim, Y.M.</searchLink><relatesTo>1</relatesTo><i> kymdow@ece.ucsb.edu</i><br /><searchLink fieldCode="AR" term="%22Griffith%2C+Z%2E%22">Griffith, Z.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Rodwell%2C+M%2EJ%2EW%2E%22">Rodwell, M.J.W.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Gossard%2C+A%2EC%2E%22">Gossard, A.C.</searchLink><relatesTo>1</relatesTo> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22IEEE+Electron+Device+Letters%22">IEEE Electron Device Letters</searchLink>. Apr2004, Vol. 25 Issue 4, p170-172. 3p. 1 Chart, 5 Graphs. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Bipolar+transistors%22">Bipolar transistors</searchLink><br /><searchLink fieldCode="DE" term="%22Heterojunctions%22">Heterojunctions</searchLink><br /><searchLink fieldCode="DE" term="%22Broadband+communication+systems%22">Broadband communication systems</searchLink><br /><searchLink fieldCode="DE" term="%22Electric+breakdown%22">Electric breakdown</searchLink><br /><searchLink fieldCode="DE" term="%22Electric+conductivity%22">Electric conductivity</searchLink><br /><searchLink fieldCode="DE" term="%22Data+transmission+systems%22">Data transmission systems</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: InP-In0.53Ga0.47As-InP double heterojunction bipolar transistors (DHBTs) were grown on GaAs substrates. A 284-GHz power-gain cutoff frequency fmax and a 216-GHz current-gain cutoff frequency fτ were obtained, presently the highest reported values for metamorphic HBTs. The breakdown voltage BVCEO was > 5 V while the dc current gain β was 21. High thermal conductivity InP metamorphic buffer layers were employed in order to minimize the device thermal resistance. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of IEEE Electron Device Letters is the property of IEEE and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1109/LED.2004.825198 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 3 StartPage: 170 Subjects: – SubjectFull: Bipolar transistors Type: general – SubjectFull: Heterojunctions Type: general – SubjectFull: Broadband communication systems Type: general – SubjectFull: Electric breakdown Type: general – SubjectFull: Electric conductivity Type: general – SubjectFull: Data transmission systems Type: general Titles: – TitleFull: High Bandwidth and Low-Leakage Current Inp-In0.53Ga0.47As-InP DBHTs on GaAs Substrates. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Kim, Y.M. – PersonEntity: Name: NameFull: Griffith, Z. – PersonEntity: Name: NameFull: Rodwell, M.J.W. – PersonEntity: Name: NameFull: Gossard, A.C. IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 04 Text: Apr2004 Type: published Y: 2004 Identifiers: – Type: issn-print Value: 07413106 Numbering: – Type: volume Value: 25 – Type: issue Value: 4 Titles: – TitleFull: IEEE Electron Device Letters Type: main |
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