View in EDS

Gallium indium eutectic masking prior to porous silicon formation creates unique spatially-dependent chemistries.

Saved in:
Bibliographic Details
Title: Gallium indium eutectic masking prior to porous silicon formation creates unique spatially-dependent chemistries.
Authors: Collado, Crystal M.1, Horner, Ian J.2, Empey, Jennifer M.3, Nguyen, Lisa N.Q.3, Bright, Frank V.1 chefvb@buffalo.edu
Source: Analytica Chimica Acta. Nov2018, Vol. 1032, p147-153. 7p.
Subjects: Indium gallium arsenide, Porous silicon, Photoluminescence, Fourier transform infrared spectroscopy, Oxidation, Mathematical models
Abstract: We demonstrate that gallium indium (GaIn) eutectic can be used to create interesting crystalline Si/porous silicon (cSi/pSi) platforms that exhibit unique analyte- and spatially-dependent photoluminescence (PL) responses. Here we characterize these cSi/pSi regions by using profilometry, scanning electron microscopy (SEM), wide-field PL microscopy, and Fourier transform infrared (FTIR) microscopy. As we move along a vector from the cSi/pSi interface out into “bulk” pSi, the: (i) analyte-dependent, PL-based response initially increases and then decreases; (ii) total PL emission intensity, in the absence of analyte, increases; (iii) pSi thickness increases; and (iv) relative O 2 Si-H to Si-H band amplitude ratio decreases. Thus, the analyte-dependent PL response magnitude is correlated to the extent of pSi oxidation; which can be easily controlled by using GaIn eutectic as a mask during the pSi fabrication process. [ABSTRACT FROM AUTHOR]
Copyright of Analytica Chimica Acta is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
Description
Abstract:We demonstrate that gallium indium (GaIn) eutectic can be used to create interesting crystalline Si/porous silicon (cSi/pSi) platforms that exhibit unique analyte- and spatially-dependent photoluminescence (PL) responses. Here we characterize these cSi/pSi regions by using profilometry, scanning electron microscopy (SEM), wide-field PL microscopy, and Fourier transform infrared (FTIR) microscopy. As we move along a vector from the cSi/pSi interface out into “bulk” pSi, the: (i) analyte-dependent, PL-based response initially increases and then decreases; (ii) total PL emission intensity, in the absence of analyte, increases; (iii) pSi thickness increases; and (iv) relative O 2 Si-H to Si-H band amplitude ratio decreases. Thus, the analyte-dependent PL response magnitude is correlated to the extent of pSi oxidation; which can be easily controlled by using GaIn eutectic as a mask during the pSi fabrication process. [ABSTRACT FROM AUTHOR]
ISSN:00032670
DOI:10.1016/j.aca.2018.05.052