Bibliographic Details
| Title: |
InGaAs—InP Mesa DHBTs With Simultaneously High ƒ&τ and ƒmax and Low Ccb/Ic Ratio. |
| Authors: |
Griffith, Z.1 griffith@ece.ucsb.edu, Dahlström, M.1, Urteaga, M.2, Rodwell, M. J. W.1, Fang, X.-M.3, Lubyshev, D.3, Wu, Y.3, Fastenau, J. M.3, Liu, W. K.3 |
| Source: |
IEEE Electron Device Letters. May2004, Vol. 25 Issue 5, p250-252. 3p. 3 Diagrams. |
| Subjects: |
Heterojunctions, Bipolar transistors, Semiconductors, Electric capacity, Semiconductor doping, Semiconductor junctions |
| Abstract: |
We report an InP-InGaAs-InP double heterojunction bipolar transistor (DHBT), fabricated using a conventional triple mesa structure, exhibiting a 370-GHz fT and 459-GHz fmax, which is to our knowledge the highest fT- reported for a mesa InP DHBT--as well as the highest simultaneous fT and fmax for any mesa HBT. The collector semiconductor was undercut to reduce the base-collector capacitance, producing a Ccb/Ic ratio of 0.28 ps/V at Vcb = 0.5 V. The VBR,CEO is 5.6 V and the devices fail thermally only at > 18 mW/μm², allowing dc bias from Je = 4.8 mA/μm² at Vce = 3.9 V to Je = 12.5 mA/μm² at Vce = 1.5 V. The device employs a 30 nm carbon-doped InGaAs base with graded base doping, and an InGaAs-InAlAs superlattice grade in the base-collector junction that contributes to a total depleted collector thickness of 150 nm. [ABSTRACT FROM AUTHOR] |
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| Database: |
Engineering Source |
