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InGaAs—InP Mesa DHBTs With Simultaneously High ƒ&τ and ƒmax and Low Ccb/Ic Ratio.

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Title: InGaAs—InP Mesa DHBTs With Simultaneously High ƒ&τ and ƒmax and Low Ccb/Ic Ratio.
Authors: Griffith, Z.1 griffith@ece.ucsb.edu, Dahlström, M.1, Urteaga, M.2, Rodwell, M. J. W.1, Fang, X.-M.3, Lubyshev, D.3, Wu, Y.3, Fastenau, J. M.3, Liu, W. K.3
Source: IEEE Electron Device Letters. May2004, Vol. 25 Issue 5, p250-252. 3p. 3 Diagrams.
Subjects: Heterojunctions, Bipolar transistors, Semiconductors, Electric capacity, Semiconductor doping, Semiconductor junctions
Abstract: We report an InP-InGaAs-InP double heterojunction bipolar transistor (DHBT), fabricated using a conventional triple mesa structure, exhibiting a 370-GHz fT and 459-GHz fmax, which is to our knowledge the highest fT- reported for a mesa InP DHBT--as well as the highest simultaneous fT and fmax for any mesa HBT. The collector semiconductor was undercut to reduce the base-collector capacitance, producing a Ccb/Ic ratio of 0.28 ps/V at Vcb = 0.5 V. The VBR,CEO is 5.6 V and the devices fail thermally only at > 18 mW/μm², allowing dc bias from Je = 4.8 mA/μm² at Vce = 3.9 V to Je = 12.5 mA/μm² at Vce = 1.5 V. The device employs a 30 nm carbon-doped InGaAs base with graded base doping, and an InGaAs-InAlAs superlattice grade in the base-collector junction that contributes to a total depleted collector thickness of 150 nm. [ABSTRACT FROM AUTHOR]
Copyright of IEEE Electron Device Letters is the property of IEEE and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Data: <searchLink fieldCode="JN" term="%22IEEE+Electron+Device+Letters%22">IEEE Electron Device Letters</searchLink>. May2004, Vol. 25 Issue 5, p250-252. 3p. 3 Diagrams.
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  Data: We report an InP-InGaAs-InP double heterojunction bipolar transistor (DHBT), fabricated using a conventional triple mesa structure, exhibiting a 370-GHz fT and 459-GHz fmax, which is to our knowledge the highest fT- reported for a mesa InP DHBT--as well as the highest simultaneous fT and fmax for any mesa HBT. The collector semiconductor was undercut to reduce the base-collector capacitance, producing a Ccb/Ic ratio of 0.28 ps/V at Vcb = 0.5 V. The VBR,CEO is 5.6 V and the devices fail thermally only at > 18 mW/μm², allowing dc bias from Je = 4.8 mA/μm² at Vce = 3.9 V to Je = 12.5 mA/μm² at Vce = 1.5 V. The device employs a 30 nm carbon-doped InGaAs base with graded base doping, and an InGaAs-InAlAs superlattice grade in the base-collector junction that contributes to a total depleted collector thickness of 150 nm. [ABSTRACT FROM AUTHOR]
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  Data: <i>Copyright of IEEE Electron Device Letters is the property of IEEE and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1109/LED.2004.827288
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