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Characterization of diode-connected heterojunction bipolar transistors for near-infrared detecting applications.

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Title: Characterization of diode-connected heterojunction bipolar transistors for near-infrared detecting applications.
Authors: Venter, Johan1 johanv@uj.ac.za, Sinha, Saurabh1,2, Lambrechts, Wynand3,4
Source: Optical Engineering. Nov2018, Vol. 57 Issue 11, p117104-1-117104-7. 7p.
Subjects: Transistors, Semiconductors
Abstract: The characterization of SiGe diode-connected heterojunction bipolar transistors (HBTs) through measurements of two-circuit configurations is presented. Characterization is done to understand the behavior of these diodes for near-infrared detecting applications at room temperature and 77 K. The two configurations that are considered differ; the first is a base-emitter shorted HBT and the second is a base-collector shorted HBT. The parameters measured are current density-voltage, capacitance–voltage, and noise. The two configurations are implemented using the austriamicrosystems AG 0.35-μm process. The base-emitter shorted configuration exhibits a flatter JC versus V curve when in reverse bias compared with the base-collector configuration. The C  −  V curves are the same for both configurations. The noise voltage of the base-emitter configuration is 36 and 14.48  μV  /  √Hz at 102.5 Hz for 293 and 77 K temperature points, respectively, to 14.48 and 12.42  μV  /  √Hz at 50 kHz for 293 and 77 K, respectively. The noise voltage for the base-collector configuration is 12.6 and 7.56  μV  /  √Hz at 102.5 Hz for 293 and 77 K, respectively, to 2.228 and 5.981  μV  /  √Hz at 50 kHz for 293 and 77 K, respectively. This work is done using a standard Si-based technology, where a detector array with readout circuitry can be prototyped as a single chip. The floating base transistor topology is analyzed and used as a foundation for this work. The characteristics of a floating base configuration result in a wide depletion region, large-series resistance, and small-series capacitance. When shorting the base with the emitter and collector, respectively, compared with a floating base configuration, a smaller depletion region, reduced series resistance, and larger series capacitance are observed. [ABSTRACT FROM AUTHOR]
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Database: Engineering Source
Description
Abstract:The characterization of SiGe diode-connected heterojunction bipolar transistors (HBTs) through measurements of two-circuit configurations is presented. Characterization is done to understand the behavior of these diodes for near-infrared detecting applications at room temperature and 77 K. The two configurations that are considered differ; the first is a base-emitter shorted HBT and the second is a base-collector shorted HBT. The parameters measured are current density-voltage, capacitance–voltage, and noise. The two configurations are implemented using the austriamicrosystems AG 0.35-μm process. The base-emitter shorted configuration exhibits a flatter JC versus V curve when in reverse bias compared with the base-collector configuration. The C  −  V curves are the same for both configurations. The noise voltage of the base-emitter configuration is 36 and 14.48  μV  /  √Hz at 102.5 Hz for 293 and 77 K temperature points, respectively, to 14.48 and 12.42  μV  /  √Hz at 50 kHz for 293 and 77 K, respectively. The noise voltage for the base-collector configuration is 12.6 and 7.56  μV  /  √Hz at 102.5 Hz for 293 and 77 K, respectively, to 2.228 and 5.981  μV  /  √Hz at 50 kHz for 293 and 77 K, respectively. This work is done using a standard Si-based technology, where a detector array with readout circuitry can be prototyped as a single chip. The floating base transistor topology is analyzed and used as a foundation for this work. The characteristics of a floating base configuration result in a wide depletion region, large-series resistance, and small-series capacitance. When shorting the base with the emitter and collector, respectively, compared with a floating base configuration, a smaller depletion region, reduced series resistance, and larger series capacitance are observed. [ABSTRACT FROM AUTHOR]
ISSN:00913286
DOI:10.1117/1.OE.57.11.117104