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Characterization of diode-connected heterojunction bipolar transistors for near-infrared detecting applications.

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Title: Characterization of diode-connected heterojunction bipolar transistors for near-infrared detecting applications.
Authors: Venter, Johan1 johanv@uj.ac.za, Sinha, Saurabh1,2, Lambrechts, Wynand3,4
Source: Optical Engineering. Nov2018, Vol. 57 Issue 11, p117104-1-117104-7. 7p.
Subjects: Transistors, Semiconductors
Abstract: The characterization of SiGe diode-connected heterojunction bipolar transistors (HBTs) through measurements of two-circuit configurations is presented. Characterization is done to understand the behavior of these diodes for near-infrared detecting applications at room temperature and 77 K. The two configurations that are considered differ; the first is a base-emitter shorted HBT and the second is a base-collector shorted HBT. The parameters measured are current density-voltage, capacitance–voltage, and noise. The two configurations are implemented using the austriamicrosystems AG 0.35-μm process. The base-emitter shorted configuration exhibits a flatter JC versus V curve when in reverse bias compared with the base-collector configuration. The C  −  V curves are the same for both configurations. The noise voltage of the base-emitter configuration is 36 and 14.48  μV  /  √Hz at 102.5 Hz for 293 and 77 K temperature points, respectively, to 14.48 and 12.42  μV  /  √Hz at 50 kHz for 293 and 77 K, respectively. The noise voltage for the base-collector configuration is 12.6 and 7.56  μV  /  √Hz at 102.5 Hz for 293 and 77 K, respectively, to 2.228 and 5.981  μV  /  √Hz at 50 kHz for 293 and 77 K, respectively. This work is done using a standard Si-based technology, where a detector array with readout circuitry can be prototyped as a single chip. The floating base transistor topology is analyzed and used as a foundation for this work. The characteristics of a floating base configuration result in a wide depletion region, large-series resistance, and small-series capacitance. When shorting the base with the emitter and collector, respectively, compared with a floating base configuration, a smaller depletion region, reduced series resistance, and larger series capacitance are observed. [ABSTRACT FROM AUTHOR]
Copyright of Optical Engineering is the property of SPIE - International Society of Optical Engineering and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Label: Title
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  Data: Characterization of diode-connected heterojunction bipolar transistors for near-infrared detecting applications.
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  Data: <searchLink fieldCode="AR" term="%22Venter%2C+Johan%22">Venter, Johan</searchLink><relatesTo>1</relatesTo><i> johanv@uj.ac.za</i><br /><searchLink fieldCode="AR" term="%22Sinha%2C+Saurabh%22">Sinha, Saurabh</searchLink><relatesTo>1,2</relatesTo><br /><searchLink fieldCode="AR" term="%22Lambrechts%2C+Wynand%22">Lambrechts, Wynand</searchLink><relatesTo>3,4</relatesTo>
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  Data: <searchLink fieldCode="JN" term="%22Optical+Engineering%22">Optical Engineering</searchLink>. Nov2018, Vol. 57 Issue 11, p117104-1-117104-7. 7p.
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  Data: <searchLink fieldCode="DE" term="%22Transistors%22">Transistors</searchLink><br /><searchLink fieldCode="DE" term="%22Semiconductors%22">Semiconductors</searchLink>
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  Label: Abstract
  Group: Ab
  Data: The characterization of SiGe diode-connected heterojunction bipolar transistors (HBTs) through measurements of two-circuit configurations is presented. Characterization is done to understand the behavior of these diodes for near-infrared detecting applications at room temperature and 77 K. The two configurations that are considered differ; the first is a base-emitter shorted HBT and the second is a base-collector shorted HBT. The parameters measured are current density-voltage, capacitance–voltage, and noise. The two configurations are implemented using the austriamicrosystems AG 0.35-μm process. The base-emitter shorted configuration exhibits a flatter JC versus V curve when in reverse bias compared with the base-collector configuration. The C  −  V curves are the same for both configurations. The noise voltage of the base-emitter configuration is 36 and 14.48  μV  /  √Hz at 102.5 Hz for 293 and 77 K temperature points, respectively, to 14.48 and 12.42  μV  /  √Hz at 50 kHz for 293 and 77 K, respectively. The noise voltage for the base-collector configuration is 12.6 and 7.56  μV  /  √Hz at 102.5 Hz for 293 and 77 K, respectively, to 2.228 and 5.981  μV  /  √Hz at 50 kHz for 293 and 77 K, respectively. This work is done using a standard Si-based technology, where a detector array with readout circuitry can be prototyped as a single chip. The floating base transistor topology is analyzed and used as a foundation for this work. The characteristics of a floating base configuration result in a wide depletion region, large-series resistance, and small-series capacitance. When shorting the base with the emitter and collector, respectively, compared with a floating base configuration, a smaller depletion region, reduced series resistance, and larger series capacitance are observed. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Optical Engineering is the property of SPIE - International Society of Optical Engineering and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
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        Value: 10.1117/1.OE.57.11.117104
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      – Code: eng
        Text: English
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        PageCount: 7
        StartPage: 117104-1
    Subjects:
      – SubjectFull: Transistors
        Type: general
      – SubjectFull: Semiconductors
        Type: general
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      – TitleFull: Characterization of diode-connected heterojunction bipolar transistors for near-infrared detecting applications.
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            – D: 01
              M: 11
              Text: Nov2018
              Type: published
              Y: 2018
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