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Design, simulation and comparative analysis of a novel FinFET based astable multivibrator.

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Title: Design, simulation and comparative analysis of a novel FinFET based astable multivibrator.
Authors: Gupta, Aayush1, Mathur, Ruchir1, Nizamuddin, M.1 mnizamuddin1@jmi.ac.in
Source: AEU: International Journal of Electronics & Communications. Feb2019, Vol. 100, p163-171. 9p.
Subjects: Complementary metal oxide semiconductors, Multivibrators, Electric resistance, Electric capacity, Digital electronics
Abstract: Abstract In this work, design and simulation of FinFET and CMOS based Astable Multivibrator (AMV) have been performed. Performance of proposed circuit was compared by varying resistance-capacitance (R – C) delay topology, supply voltage ( V dd ) and operating temperature (T) at 45 nm technology node using spice simulator. FinFET-AMV shows significant improvement over CMOS-AMV. An increase of 1.66% in amplitude, 84.4% in rise time and 73.3% in fall time of output square wave in FinFET-AMV was observed. A significant increase in the slew rate by 398% which improved the percentage wave slewed by 77.3% resulted in the increase of bandwidth by 655% from 768 MHz to 5.8 GHz. It was also observed that FinFET-AMV Starts to function properly at 0.39 V compared to CMOS-AMV which starts to function properly at 0.58 V. The power dissipation was found to be 2.23 times in FinFET-AMV, however, the study revealed that this could be improved by lowering the supply voltage. [ABSTRACT FROM AUTHOR]
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Database: Engineering Source
Description
Abstract:Abstract In this work, design and simulation of FinFET and CMOS based Astable Multivibrator (AMV) have been performed. Performance of proposed circuit was compared by varying resistance-capacitance (R – C) delay topology, supply voltage ( V dd ) and operating temperature (T) at 45 nm technology node using spice simulator. FinFET-AMV shows significant improvement over CMOS-AMV. An increase of 1.66% in amplitude, 84.4% in rise time and 73.3% in fall time of output square wave in FinFET-AMV was observed. A significant increase in the slew rate by 398% which improved the percentage wave slewed by 77.3% resulted in the increase of bandwidth by 655% from 768 MHz to 5.8 GHz. It was also observed that FinFET-AMV Starts to function properly at 0.39 V compared to CMOS-AMV which starts to function properly at 0.58 V. The power dissipation was found to be 2.23 times in FinFET-AMV, however, the study revealed that this could be improved by lowering the supply voltage. [ABSTRACT FROM AUTHOR]
ISSN:14348411
DOI:10.1016/j.aeue.2018.12.007