Design, simulation and comparative analysis of a novel FinFET based astable multivibrator.
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| Title: | Design, simulation and comparative analysis of a novel FinFET based astable multivibrator. |
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| Authors: | Gupta, Aayush1, Mathur, Ruchir1, Nizamuddin, M.1 mnizamuddin1@jmi.ac.in |
| Source: | AEU: International Journal of Electronics & Communications. Feb2019, Vol. 100, p163-171. 9p. |
| Subjects: | Complementary metal oxide semiconductors, Multivibrators, Electric resistance, Electric capacity, Digital electronics |
| Abstract: | Abstract In this work, design and simulation of FinFET and CMOS based Astable Multivibrator (AMV) have been performed. Performance of proposed circuit was compared by varying resistance-capacitance (R – C) delay topology, supply voltage ( V dd ) and operating temperature (T) at 45 nm technology node using spice simulator. FinFET-AMV shows significant improvement over CMOS-AMV. An increase of 1.66% in amplitude, 84.4% in rise time and 73.3% in fall time of output square wave in FinFET-AMV was observed. A significant increase in the slew rate by 398% which improved the percentage wave slewed by 77.3% resulted in the increase of bandwidth by 655% from 768 MHz to 5.8 GHz. It was also observed that FinFET-AMV Starts to function properly at 0.39 V compared to CMOS-AMV which starts to function properly at 0.58 V. The power dissipation was found to be 2.23 times in FinFET-AMV, however, the study revealed that this could be improved by lowering the supply voltage. [ABSTRACT FROM AUTHOR] |
| Copyright of AEU: International Journal of Electronics & Communications is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
| FullText | Text: Availability: 0 |
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| Header | DbId: egs DbLabel: Engineering Source An: 134322797 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Design, simulation and comparative analysis of a novel FinFET based astable multivibrator. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Gupta%2C+Aayush%22">Gupta, Aayush</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Mathur%2C+Ruchir%22">Mathur, Ruchir</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Nizamuddin%2C+M%2E%22">Nizamuddin, M.</searchLink><relatesTo>1</relatesTo><i> mnizamuddin1@jmi.ac.in</i> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22AEU%3A+International+Journal+of+Electronics+%26+Communications%22">AEU: International Journal of Electronics & Communications</searchLink>. Feb2019, Vol. 100, p163-171. 9p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Complementary+metal+oxide+semiconductors%22">Complementary metal oxide semiconductors</searchLink><br /><searchLink fieldCode="DE" term="%22Multivibrators%22">Multivibrators</searchLink><br /><searchLink fieldCode="DE" term="%22Electric+resistance%22">Electric resistance</searchLink><br /><searchLink fieldCode="DE" term="%22Electric+capacity%22">Electric capacity</searchLink><br /><searchLink fieldCode="DE" term="%22Digital+electronics%22">Digital electronics</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: Abstract In this work, design and simulation of FinFET and CMOS based Astable Multivibrator (AMV) have been performed. Performance of proposed circuit was compared by varying resistance-capacitance (R – C) delay topology, supply voltage ( V dd ) and operating temperature (T) at 45 nm technology node using spice simulator. FinFET-AMV shows significant improvement over CMOS-AMV. An increase of 1.66% in amplitude, 84.4% in rise time and 73.3% in fall time of output square wave in FinFET-AMV was observed. A significant increase in the slew rate by 398% which improved the percentage wave slewed by 77.3% resulted in the increase of bandwidth by 655% from 768 MHz to 5.8 GHz. It was also observed that FinFET-AMV Starts to function properly at 0.39 V compared to CMOS-AMV which starts to function properly at 0.58 V. The power dissipation was found to be 2.23 times in FinFET-AMV, however, the study revealed that this could be improved by lowering the supply voltage. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of AEU: International Journal of Electronics & Communications is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1016/j.aeue.2018.12.007 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 9 StartPage: 163 Subjects: – SubjectFull: Complementary metal oxide semiconductors Type: general – SubjectFull: Multivibrators Type: general – SubjectFull: Electric resistance Type: general – SubjectFull: Electric capacity Type: general – SubjectFull: Digital electronics Type: general Titles: – TitleFull: Design, simulation and comparative analysis of a novel FinFET based astable multivibrator. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Gupta, Aayush – PersonEntity: Name: NameFull: Mathur, Ruchir – PersonEntity: Name: NameFull: Nizamuddin, M. IsPartOfRelationships: – BibEntity: Dates: – D: 15 M: 02 Text: Feb2019 Type: published Y: 2019 Identifiers: – Type: issn-print Value: 14348411 Numbering: – Type: volume Value: 100 Titles: – TitleFull: AEU: International Journal of Electronics & Communications Type: main |
| ResultId | 1 |
