Very High-Speed ROM Using Bipolar/CMOS Technology.

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Bibliographic Details
Title:	Very High-Speed ROM Using Bipolar/CMOS Technology.
Authors:	Kurita, Koozaburoo¹, Hotta, Takasi¹, Ueno, Masahiro², Hotta, Atsuo³
Source:	Electronics & Communications in Japan, Part 2: Electronics. Jul88, Vol. 71 Issue 7, p18-26. 9p.
Subjects:	Read-only memory, Complementary metal oxide semiconductors, Microprogramming, Computer programming, Bipolar transistors, Integrated circuits
Abstract:	It is a common price to realize the internal control of a logic LSI by means of a microprogramming method. A high-speed operation ROM (micro ROM) which stores this microprogram code. This paper proposes a new circuit configuration derived from a combination of bipolar and CMOS technology for a high-speed micro ROM. In this configuration, the memory cell array is made of MOS transistors while the array is made of MOS transistors while the array periphery consists of a bipolar/CMOS composite circuit in which a high driving capability and a large gm of the bipolar transistor are used so that a high degree of integration and a high speed are attained simultaneously. To confirm the high-speed characteristic of the proposed circuit, a micro ROM of 2 k words x 64 bits has been fabricated with the 2 µm HI-BiCMOS process mixing the bipolar and CMOS structures. The test results of the fabricated device have a minimum read-out cycle time of 16 ns which is more than twice that of a CMOS circuit having an identical configuration. [ABSTRACT FROM AUTHOR]
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Database:	Engineering Source

Description
Abstract:	It is a common price to realize the internal control of a logic LSI by means of a microprogramming method. A high-speed operation ROM (micro ROM) which stores this microprogram code. This paper proposes a new circuit configuration derived from a combination of bipolar and CMOS technology for a high-speed micro ROM. In this configuration, the memory cell array is made of MOS transistors while the array is made of MOS transistors while the array periphery consists of a bipolar/CMOS composite circuit in which a high driving capability and a large gm of the bipolar transistor are used so that a high degree of integration and a high speed are attained simultaneously. To confirm the high-speed characteristic of the proposed circuit, a micro ROM of 2 k words x 64 bits has been fabricated with the 2 µm HI-BiCMOS process mixing the bipolar and CMOS structures. The test results of the fabricated device have a minimum read-out cycle time of 16 ns which is more than twice that of a CMOS circuit having an identical configuration. [ABSTRACT FROM AUTHOR]
ISSN:	8756663X
DOI:	10.1002/ecjb.4420710703