View in EDS

Studies on structural and electrical behaviors of chemically grown ZnO/SnO2 nanocomposites.

Saved in:
Bibliographic Details
Title: Studies on structural and electrical behaviors of chemically grown ZnO/SnO2 nanocomposites.
Authors: Lagariya, Mayur1 (AUTHOR), Modi, Mansi1 (AUTHOR), Dadhich, Himanshu1 (AUTHOR), Gal, Manan1 (AUTHOR), Gadani, Keval1 (AUTHOR), Solanki, P.S.1 (AUTHOR), Shah, N.A.1 (AUTHOR) snikesh@yahoo.com
Source: Physica B. Jan2020, Vol. 577, pN.PAG-N.PAG. 1p.
Subjects: Dielectric relaxation, Crystal grain boundaries, X-ray diffraction, Ferroelectric crystals, Spintronics
Abstract: Nanostructured oxides are attracting enormous interest due to their variety of applications such as energy materials, dielectrics, ferroelectrics, piezoelectrics, superconductors, spintronics, catalysts, biological agents, etc. For the present study, ZnO:SnO 2 nanocomposites were prepared by addition of nanostructured SnO 2 in ZnO nanostructured matrix. X–ray diffraction (XRD) measurement reveals the single phase nature of pure ZnO and SnO 2 oxides as well as their composites. Variation in a.c. conductivity has been discussed on the basis of Jonscher's universal power law which suggests that charge conduction is governed by correlated barrier hopping (CBH) mechanism. Estimated maximum barrier height is found to decrease with increase in SnO 2 nanoparticles content in the nanostructured ZnO matrix. Dielectric behavior has been understood in the context of relaxation formula and universal dielectric relaxation (UDR) model. Relaxation fits suggest that SnO 2 content suppresses the relaxation time for dipoles to get aligned whereas it enhances the relaxation time distribution factor. • ZnO:SnO2 nanocomposites were successfully synthesized by sol–gel method. • Variation in impedance has been discussed in the context of grain boundaries. • Dielectric responses have been discussed using the UDR model and related relaxation mechanisms. • AC conductivity has been discussed using power law fits. [ABSTRACT FROM AUTHOR]
Copyright of Physica B is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
Description
Abstract:Nanostructured oxides are attracting enormous interest due to their variety of applications such as energy materials, dielectrics, ferroelectrics, piezoelectrics, superconductors, spintronics, catalysts, biological agents, etc. For the present study, ZnO:SnO 2 nanocomposites were prepared by addition of nanostructured SnO 2 in ZnO nanostructured matrix. X–ray diffraction (XRD) measurement reveals the single phase nature of pure ZnO and SnO 2 oxides as well as their composites. Variation in a.c. conductivity has been discussed on the basis of Jonscher's universal power law which suggests that charge conduction is governed by correlated barrier hopping (CBH) mechanism. Estimated maximum barrier height is found to decrease with increase in SnO 2 nanoparticles content in the nanostructured ZnO matrix. Dielectric behavior has been understood in the context of relaxation formula and universal dielectric relaxation (UDR) model. Relaxation fits suggest that SnO 2 content suppresses the relaxation time for dipoles to get aligned whereas it enhances the relaxation time distribution factor. • ZnO:SnO2 nanocomposites were successfully synthesized by sol–gel method. • Variation in impedance has been discussed in the context of grain boundaries. • Dielectric responses have been discussed using the UDR model and related relaxation mechanisms. • AC conductivity has been discussed using power law fits. [ABSTRACT FROM AUTHOR]
ISSN:09214526
DOI:10.1016/j.physb.2019.411774