Bibliographic Details
| Title: |
Crystal structure, spectroscopic, magnetic and dielectric studies of new doped ceramic ZrTe3O8:7%CuO. |
| Authors: |
Koubaa, M.1 (AUTHOR) mariem_koubaa123@yahoo.fr, Karray, R.1 (AUTHOR), Bessais, L.2 (AUTHOR), Kabadou, A.1 (AUTHOR) |
| Source: |
Journal of Alloys & Compounds. Jun2020, Vol. 825, pN.PAG-N.PAG. 1p. |
| Subjects: |
Crystal structure, Transparent ceramics, Nonbonding electron pairs, Dielectrics, Solid state electronics, Polymorphism (Crystallography), Dielectric properties |
| Abstract: |
In this study, calcined ZrTe 3 O 8 powder mixed with 7%wt of CuO was sintered at 750 °C. The new doped ceramic ZrTe 3 O 8 :7%CuO was synthesized using solid state reaction method and was studied with X-ray diffraction (XRD). At room temperature, the title compound crystallizes in cubic space group Ia 3 ‾ , with lattice parameter a = 11.328(3) Å, and exhibits a complex network of interconnected closed chains built up of TeO 4 E (E = electronic lone pair of Te (IV) atoms). The Zr/CuO 6 octahedra are inserted into these chains ensuring the stability of the structure by Zr/Cu –O–Te bonding contacts. IR and Raman spectroscopic study are employed as means to obtain preliminary structural information and confirms the presence of the ZrO 6 and TeO 4 E groups. Optical properties of the ceramic were explored by using UV–Vis absorption. The magnetic results reveal the appearance of a weak ferromagnetic behavior at low temperature (T C = 46.172 K). In addition, dielectric data were analyzed using real and imaginary permittivity ε ' and ε " respectively, the tan (δ) and the electrical modulus ( M ' and M″) for the sample ZrTe 3 O 8 :7%CuO at various frequencies. The Z ' and Z " versus frequency plots are well fitted to an equivalent circuit model composed of a series combination of two parallel combinations of resistance Ri and constant phase element CPEi. • The ceramic crystallized ain the cubic fluorite structure (Ia 3 ‾). • The Zr/CuO 6 octahedra are inserted into TeO 4 E chains ensuring the stability of the structure by Zr/Cu –O–Te bonding contacts. • The magnetic results reveal the appearance of a weak ferromagnetic behavior at low temperature (T C = 46.172 K). • The equivalent circuit model is composed of a series combination of two parallel combinations of resistance Ri and constant phase element CPEi. [ABSTRACT FROM AUTHOR] |
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| Database: |
Engineering Source |