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A simple route for manufacture of photovoltaic devices based on chalcohalide nanowires.

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Title: A simple route for manufacture of photovoltaic devices based on chalcohalide nanowires.
Authors: Mistewicz, Krystian1 (AUTHOR) krystian.mistewicz@polsl.pl, Matysiak, Wiktor1,2 (AUTHOR) wiktor.matysiak@polsl.pl, Jesionek, Marcin1 (AUTHOR), Jarka, Paweł2 (AUTHOR), Kępińska, Mirosława1 (AUTHOR), Nowak, Marian1 (AUTHOR), Tański, Tomasz2 (AUTHOR), Stróż, Danuta3 (AUTHOR), Szade, Jacek4 (AUTHOR), Balin, Katarzyna4 (AUTHOR), Rzychoń, Tomasz5 (AUTHOR)
Source: Applied Surface Science. Jul2020, Vol. 517, pN.PAG-N.PAG. 1p.
Subjects: Energy harvesting, Open-circuit voltage, Polyacrylonitriles, Indium tin oxide, Short-circuit currents, Electric lighting
Abstract: • Simple spin-on fabrication of SbSI photovoltaic nanodevices shown for the first time. • Fabrication realized at mild conditions without need of high temperature treatment. • Universal method not restricted to any special component or nanomaterial. • Short-circuit current density of 1.84(20) µA/cm2 achieved under AM1.5 illumination. • SbSI nanowires promising for solar energy harvesters and self-powered photodetectors. The one-dimensional nanostructures of antimony sulfoiodide (SbSI) have received in last decade a great attention due to their outstanding photoferroelectric properties combined with narrow energy band gap beneficial for effective conversion of visible light into electric signal. This paper reports for the first time a simple and fast route for fabrication of photovoltaic devices based on SbSI nanowires. This method involves sonochemical synthesis of SbSI nanowires and spin-coating SbSI-polyacrylonitrile (PAN) composite, on indium tin oxide (ITO) substrate. In order to promote efficient charge transfer titanium dioxide (TiO 2) and poly(3-hexylthiophene) (P3HT) were applied as an electron and hole transporting layers, respectively. Proposed method can be realized at mild conditions and does not require any additional high temperature treatment in contrast to other methods known for fabrication of SbSI photovoltaic structures. Fabricated structures exhibited an average short-circuit current density of 1.84(20) µA/cm2 and open circuit voltage of 69(13) mV under a white light illumination with power density of 100 mW/cm2. SbSI nanowires as lead-free nanomaterials are promising for solar energy harvesting and an application in photodetectors, that can operate in self-powered mode. [ABSTRACT FROM AUTHOR]
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Database: Engineering Source
Description
Abstract:• Simple spin-on fabrication of SbSI photovoltaic nanodevices shown for the first time. • Fabrication realized at mild conditions without need of high temperature treatment. • Universal method not restricted to any special component or nanomaterial. • Short-circuit current density of 1.84(20) µA/cm2 achieved under AM1.5 illumination. • SbSI nanowires promising for solar energy harvesters and self-powered photodetectors. The one-dimensional nanostructures of antimony sulfoiodide (SbSI) have received in last decade a great attention due to their outstanding photoferroelectric properties combined with narrow energy band gap beneficial for effective conversion of visible light into electric signal. This paper reports for the first time a simple and fast route for fabrication of photovoltaic devices based on SbSI nanowires. This method involves sonochemical synthesis of SbSI nanowires and spin-coating SbSI-polyacrylonitrile (PAN) composite, on indium tin oxide (ITO) substrate. In order to promote efficient charge transfer titanium dioxide (TiO 2) and poly(3-hexylthiophene) (P3HT) were applied as an electron and hole transporting layers, respectively. Proposed method can be realized at mild conditions and does not require any additional high temperature treatment in contrast to other methods known for fabrication of SbSI photovoltaic structures. Fabricated structures exhibited an average short-circuit current density of 1.84(20) µA/cm2 and open circuit voltage of 69(13) mV under a white light illumination with power density of 100 mW/cm2. SbSI nanowires as lead-free nanomaterials are promising for solar energy harvesting and an application in photodetectors, that can operate in self-powered mode. [ABSTRACT FROM AUTHOR]
ISSN:01694332
DOI:10.1016/j.apsusc.2020.146138