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Effects of defects on heat conduction of graphene/hexagonal boron nitride heterointerface.

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Title: Effects of defects on heat conduction of graphene/hexagonal boron nitride heterointerface.
Authors: Pan, Yichen1 (AUTHOR), Li, Lin1 (AUTHOR), Yuan, Xiaoming1 (AUTHOR), Guo, Juan1 (AUTHOR), Yang, Ping1 (AUTHOR) yangpingdm@ujs.edu.cn
Source: Physics Letters A. Oct2020, Vol. 384 Issue 30, pN.PAG-N.PAG. 1p.
Subjects: Boron nitride, Heat conduction, Thermal resistance, Point defects, Thermal conductivity, Phonons
Abstract: • The effect of defects and different stacking forms on the thermal conductivity of G/h-BN is explored. • We investigated the thermal transport of G/h-BN with different stacking forms. • We detect the addition of defects leads to the enhancement of low-frequency phonons coupling between graphene and h-BN layer. • We find that there is the thermal rectification rate increases from 0% to 7% with the defect rate increases from 0% to 5%. • It implies the potential in future G/h-BN-based thermal rectification device applications. We investigate the effects of point defects on the Interface Thermal Resistance (ITR) of graphene/hexagonal boron nitride (G/h-BN) heterointerface with various stacking forms by ultrafast thermal pulse method. The results reveal that the ITR of different stacking forms presents a significant downward trend with the existence of point defects. This counterintuitive behavior is attributed to the defects increase the vibration intensity of out-of-plane phonons of graphene in low-frequency region, thus enhancing the phonons coupling between graphene and h-BN layer. ITR of G/h-BN is further reduced by 50% with the defect rate increases from 0% to 5% and that is reduced by 65% with the temperature rises from 200 K to 700 K. Besides, it is found that the defective G/h-BN has thermal rectification characteristic and that is positively related to temperature and defect rate. Our study provides a practical way for the application of defects in graphene and a new approach for the design of thermal rectifier devices. [ABSTRACT FROM AUTHOR]
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Database: Engineering Source
Description
Abstract:• The effect of defects and different stacking forms on the thermal conductivity of G/h-BN is explored. • We investigated the thermal transport of G/h-BN with different stacking forms. • We detect the addition of defects leads to the enhancement of low-frequency phonons coupling between graphene and h-BN layer. • We find that there is the thermal rectification rate increases from 0% to 7% with the defect rate increases from 0% to 5%. • It implies the potential in future G/h-BN-based thermal rectification device applications. We investigate the effects of point defects on the Interface Thermal Resistance (ITR) of graphene/hexagonal boron nitride (G/h-BN) heterointerface with various stacking forms by ultrafast thermal pulse method. The results reveal that the ITR of different stacking forms presents a significant downward trend with the existence of point defects. This counterintuitive behavior is attributed to the defects increase the vibration intensity of out-of-plane phonons of graphene in low-frequency region, thus enhancing the phonons coupling between graphene and h-BN layer. ITR of G/h-BN is further reduced by 50% with the defect rate increases from 0% to 5% and that is reduced by 65% with the temperature rises from 200 K to 700 K. Besides, it is found that the defective G/h-BN has thermal rectification characteristic and that is positively related to temperature and defect rate. Our study provides a practical way for the application of defects in graphene and a new approach for the design of thermal rectifier devices. [ABSTRACT FROM AUTHOR]
ISSN:03759601
DOI:10.1016/j.physleta.2020.126774