Effects of defects on heat conduction of graphene/hexagonal boron nitride heterointerface.
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| Title: | Effects of defects on heat conduction of graphene/hexagonal boron nitride heterointerface. |
|---|---|
| Authors: | Pan, Yichen1 (AUTHOR), Li, Lin1 (AUTHOR), Yuan, Xiaoming1 (AUTHOR), Guo, Juan1 (AUTHOR), Yang, Ping1 (AUTHOR) yangpingdm@ujs.edu.cn |
| Source: | Physics Letters A. Oct2020, Vol. 384 Issue 30, pN.PAG-N.PAG. 1p. |
| Subjects: | Boron nitride, Heat conduction, Thermal resistance, Point defects, Thermal conductivity, Phonons |
| Abstract: | • The effect of defects and different stacking forms on the thermal conductivity of G/h-BN is explored. • We investigated the thermal transport of G/h-BN with different stacking forms. • We detect the addition of defects leads to the enhancement of low-frequency phonons coupling between graphene and h-BN layer. • We find that there is the thermal rectification rate increases from 0% to 7% with the defect rate increases from 0% to 5%. • It implies the potential in future G/h-BN-based thermal rectification device applications. We investigate the effects of point defects on the Interface Thermal Resistance (ITR) of graphene/hexagonal boron nitride (G/h-BN) heterointerface with various stacking forms by ultrafast thermal pulse method. The results reveal that the ITR of different stacking forms presents a significant downward trend with the existence of point defects. This counterintuitive behavior is attributed to the defects increase the vibration intensity of out-of-plane phonons of graphene in low-frequency region, thus enhancing the phonons coupling between graphene and h-BN layer. ITR of G/h-BN is further reduced by 50% with the defect rate increases from 0% to 5% and that is reduced by 65% with the temperature rises from 200 K to 700 K. Besides, it is found that the defective G/h-BN has thermal rectification characteristic and that is positively related to temperature and defect rate. Our study provides a practical way for the application of defects in graphene and a new approach for the design of thermal rectifier devices. [ABSTRACT FROM AUTHOR] |
| Copyright of Physics Letters A is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
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| Header | DbId: egs DbLabel: Engineering Source An: 145474825 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Effects of defects on heat conduction of graphene/hexagonal boron nitride heterointerface. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Pan%2C+Yichen%22">Pan, Yichen</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Li%2C+Lin%22">Li, Lin</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Yuan%2C+Xiaoming%22">Yuan, Xiaoming</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Guo%2C+Juan%22">Guo, Juan</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Yang%2C+Ping%22">Yang, Ping</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> yangpingdm@ujs.edu.cn</i> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Physics+Letters+A%22">Physics Letters A</searchLink>. Oct2020, Vol. 384 Issue 30, pN.PAG-N.PAG. 1p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Boron+nitride%22">Boron nitride</searchLink><br /><searchLink fieldCode="DE" term="%22Heat+conduction%22">Heat conduction</searchLink><br /><searchLink fieldCode="DE" term="%22Thermal+resistance%22">Thermal resistance</searchLink><br /><searchLink fieldCode="DE" term="%22Point+defects%22">Point defects</searchLink><br /><searchLink fieldCode="DE" term="%22Thermal+conductivity%22">Thermal conductivity</searchLink><br /><searchLink fieldCode="DE" term="%22Phonons%22">Phonons</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: • The effect of defects and different stacking forms on the thermal conductivity of G/h-BN is explored. • We investigated the thermal transport of G/h-BN with different stacking forms. • We detect the addition of defects leads to the enhancement of low-frequency phonons coupling between graphene and h-BN layer. • We find that there is the thermal rectification rate increases from 0% to 7% with the defect rate increases from 0% to 5%. • It implies the potential in future G/h-BN-based thermal rectification device applications. We investigate the effects of point defects on the Interface Thermal Resistance (ITR) of graphene/hexagonal boron nitride (G/h-BN) heterointerface with various stacking forms by ultrafast thermal pulse method. The results reveal that the ITR of different stacking forms presents a significant downward trend with the existence of point defects. This counterintuitive behavior is attributed to the defects increase the vibration intensity of out-of-plane phonons of graphene in low-frequency region, thus enhancing the phonons coupling between graphene and h-BN layer. ITR of G/h-BN is further reduced by 50% with the defect rate increases from 0% to 5% and that is reduced by 65% with the temperature rises from 200 K to 700 K. Besides, it is found that the defective G/h-BN has thermal rectification characteristic and that is positively related to temperature and defect rate. Our study provides a practical way for the application of defects in graphene and a new approach for the design of thermal rectifier devices. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Physics Letters A is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1016/j.physleta.2020.126774 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 1 StartPage: N.PAG Subjects: – SubjectFull: Boron nitride Type: general – SubjectFull: Heat conduction Type: general – SubjectFull: Thermal resistance Type: general – SubjectFull: Point defects Type: general – SubjectFull: Thermal conductivity Type: general – SubjectFull: Phonons Type: general Titles: – TitleFull: Effects of defects on heat conduction of graphene/hexagonal boron nitride heterointerface. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Pan, Yichen – PersonEntity: Name: NameFull: Li, Lin – PersonEntity: Name: NameFull: Yuan, Xiaoming – PersonEntity: Name: NameFull: Guo, Juan – PersonEntity: Name: NameFull: Yang, Ping IsPartOfRelationships: – BibEntity: Dates: – D: 30 M: 10 Text: Oct2020 Type: published Y: 2020 Identifiers: – Type: issn-print Value: 03759601 Numbering: – Type: volume Value: 384 – Type: issue Value: 30 Titles: – TitleFull: Physics Letters A Type: main |
| ResultId | 1 |
