Magnetic field effect on spin-polarized transport in asymmetric multibarrier based on InAs/GaAs/GaSb systems.
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| Title: | Magnetic field effect on spin-polarized transport in asymmetric multibarrier based on InAs/GaAs/GaSb systems. |
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| Authors: | Dakhlaoui, Hassen1,2 (AUTHOR) hbaldkhlaen@iau.edu.sa, Nefzi, Mouna3 (AUTHOR), Al-Shameri, Najla S.1,2 (AUTHOR), Al Suwaidan, Alanoud1,2 (AUTHOR), Elmobkey, Hadeel1,2 (AUTHOR), Almansour, Shaffa1,2 (AUTHOR), Alnaim, Ibtessam1,2 (AUTHOR) |
| Source: | Physica B. Nov2020, Vol. 597, pN.PAG-N.PAG. 1p. |
| Subjects: | Magnetic field effects, Spin polarization, Polarized electrons, Auditing standards, Transfer matrix, Spin-orbit interactions |
| Abstract: | This paper investigates how an applied magnetic field, the quantum size, and spin polarization effect an asymmetric heterostructure composed of InAs, GaAs, and GaSb semiconductors. Using a theoretical approach based on the transfer matrix method and taking into account the Rashba and Dresselhaus spin-orbit interactions, we calculate the spin-dependent transmissions of spin-up and -down electrons and their spin polarization across our heterostructure. Our results indicate that the transmission coefficients and the resonance states can be tuned to a red or blue shift by adjusting the quantum wells and the barrier widths. Two resonance states are detected when the width of the central barrier L bc is reduced. Furthermore, we show that the impact of an applied magnetic field on the spin polarization can polarize 100% of either spin -up or -down electrons by selecting the appropriate range of incident energy and suitable magnetic field. These results are useful for the design and fabrications of spin-filter devices operating under an applied magnetic field. [ABSTRACT FROM AUTHOR] |
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| Database: | Engineering Source |
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