Bibliographic Details
| Title: |
Optical characterization of semiconductor saturable absorbers. |
| Authors: |
Haiml, M.1 haiml@phys.ethz.eh, Grange, R.1, Keller, U.1 |
| Source: |
Applied Physics B: Lasers & Optics. Aug2004, Vol. 79 Issue 3, p331-339. 9p. |
| Subjects: |
Semiconductor characterization, Semiconductor lasers, Laser mirrors, Optoelectronic devices, Absorption, Optics |
| Abstract: |
Semiconductor saturable absorber mirror (SESAM) devices have become a key component of ultrafast passive mode-locked laser sources. Here we describe in more detail how the key SESAM parameters such as saturation fluence, modulation depth, and nonsaturable losses are measured with a high accuracy. These parameters need to be known and controlled to obtain stable pulse generation for a given laser. A high-precision, wide dynamic range setup is required to measure this nonlinear reflectivity of saturable absorbers. The challenge to measure a low modulation depth and key measures necessary to obtain an accurate calibration are described in detail. The model function for the nonlinear reflectivity is based on a simple two level travelling wave system. We include spatial beam profiles, nonsaturable losses and higher-order absorption, such as two-photon absorption and other induced absorption. Guidelines to extract the key parameters from the measured data are given. [ABSTRACT FROM AUTHOR] |
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| Database: |
Engineering Source |
