Optical characterization of semiconductor saturable absorbers.
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| Title: | Optical characterization of semiconductor saturable absorbers. |
|---|---|
| Authors: | Haiml, M.1 haiml@phys.ethz.eh, Grange, R.1, Keller, U.1 |
| Source: | Applied Physics B: Lasers & Optics. Aug2004, Vol. 79 Issue 3, p331-339. 9p. |
| Subjects: | Semiconductor characterization, Semiconductor lasers, Laser mirrors, Optoelectronic devices, Absorption, Optics |
| Abstract: | Semiconductor saturable absorber mirror (SESAM) devices have become a key component of ultrafast passive mode-locked laser sources. Here we describe in more detail how the key SESAM parameters such as saturation fluence, modulation depth, and nonsaturable losses are measured with a high accuracy. These parameters need to be known and controlled to obtain stable pulse generation for a given laser. A high-precision, wide dynamic range setup is required to measure this nonlinear reflectivity of saturable absorbers. The challenge to measure a low modulation depth and key measures necessary to obtain an accurate calibration are described in detail. The model function for the nonlinear reflectivity is based on a simple two level travelling wave system. We include spatial beam profiles, nonsaturable losses and higher-order absorption, such as two-photon absorption and other induced absorption. Guidelines to extract the key parameters from the measured data are given. [ABSTRACT FROM AUTHOR] |
| Copyright of Applied Physics B: Lasers & Optics is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
| FullText | Links: – Type: pdflink Text: Availability: 0 |
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| Header | DbId: egs DbLabel: Engineering Source An: 14636762 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Optical characterization of semiconductor saturable absorbers. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Haiml%2C+M%2E%22">Haiml, M.</searchLink><relatesTo>1</relatesTo><i> haiml@phys.ethz.eh</i><br /><searchLink fieldCode="AR" term="%22Grange%2C+R%2E%22">Grange, R.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Keller%2C+U%2E%22">Keller, U.</searchLink><relatesTo>1</relatesTo> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Applied+Physics+B%3A+Lasers+%26+Optics%22">Applied Physics B: Lasers & Optics</searchLink>. Aug2004, Vol. 79 Issue 3, p331-339. 9p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Semiconductor+characterization%22">Semiconductor characterization</searchLink><br /><searchLink fieldCode="DE" term="%22Semiconductor+lasers%22">Semiconductor lasers</searchLink><br /><searchLink fieldCode="DE" term="%22Laser+mirrors%22">Laser mirrors</searchLink><br /><searchLink fieldCode="DE" term="%22Optoelectronic+devices%22">Optoelectronic devices</searchLink><br /><searchLink fieldCode="DE" term="%22Absorption%22">Absorption</searchLink><br /><searchLink fieldCode="DE" term="%22Optics%22">Optics</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: Semiconductor saturable absorber mirror (SESAM) devices have become a key component of ultrafast passive mode-locked laser sources. Here we describe in more detail how the key SESAM parameters such as saturation fluence, modulation depth, and nonsaturable losses are measured with a high accuracy. These parameters need to be known and controlled to obtain stable pulse generation for a given laser. A high-precision, wide dynamic range setup is required to measure this nonlinear reflectivity of saturable absorbers. The challenge to measure a low modulation depth and key measures necessary to obtain an accurate calibration are described in detail. The model function for the nonlinear reflectivity is based on a simple two level travelling wave system. We include spatial beam profiles, nonsaturable losses and higher-order absorption, such as two-photon absorption and other induced absorption. Guidelines to extract the key parameters from the measured data are given. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Applied Physics B: Lasers & Optics is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1007/s00340-004-1535-1 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 9 StartPage: 331 Subjects: – SubjectFull: Semiconductor characterization Type: general – SubjectFull: Semiconductor lasers Type: general – SubjectFull: Laser mirrors Type: general – SubjectFull: Optoelectronic devices Type: general – SubjectFull: Absorption Type: general – SubjectFull: Optics Type: general Titles: – TitleFull: Optical characterization of semiconductor saturable absorbers. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Haiml, M. – PersonEntity: Name: NameFull: Grange, R. – PersonEntity: Name: NameFull: Keller, U. IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 08 Text: Aug2004 Type: published Y: 2004 Identifiers: – Type: issn-print Value: 09462171 Numbering: – Type: volume Value: 79 – Type: issue Value: 3 Titles: – TitleFull: Applied Physics B: Lasers & Optics Type: main |
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