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Ferroelectric polarization induced memristive behavior in bismuth ferrite (BiFeO3) based memory devices.

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Title: Ferroelectric polarization induced memristive behavior in bismuth ferrite (BiFeO3) based memory devices.
Authors: Kossar, Shahnaz1 (AUTHOR), Amiruddin, R.1 (AUTHOR) amir@crescent.education, Rasool, Asif1 (AUTHOR), Giridharan, N.V.2 (AUTHOR), Dhayanithi, D.2 (AUTHOR), Santhosh Kumar, M.C.3 (AUTHOR)
Source: Superlattices & Microstructures. Dec2020, Vol. 148, pN.PAG-N.PAG. 1p.
Subjects: Computer storage devices, Bismuth, Ferrites, Indium tin oxide, Thin films, Aluminum films, Barium titanate
Abstract: Bismuth ferrite (BiFeO 3 , BFO) thin films of various thickness were deposited using spray pyrolysis technique at 673 K. The structural studies of the prepared BFO thin films show a rhombohedral structure with R3c space group. The morphological analysis reveals that prepared BFO thin film samples exhibit a uniform and less porous grains. Different thickness of BFO thin films (174–808 nm) was stacked as an active layer between aluminum (Al) and indium doped tin oxide (ITO) electrodes. With the optimum thickness of the BFO intermediate layer, the polarization-electric field (P-E) loop analysis of the ITO/BFO/Al device showed a hysteresis loop with remnant polarization (P r) of 0.21 μC/cm2 and coercive field (E c) of 33.4 kV/cm respectively. The impact of the BFO switching layers with varying thickness towards control of oxygen vacancy (V O) defects and the effective role of polarization induced resistive switching (RS) characteristics were explored. • Realization of BFO resistive switching layers by cost-effective spray pyrolysis technique. • XPS analysis of different thickness of BFO layers to study the control of oxygen vacancy (V O) defects. • The effective role of polarization in BFO layers towards resistive switching (RS) characteristics were explored. [ABSTRACT FROM AUTHOR]
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Database: Engineering Source
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Abstract:Bismuth ferrite (BiFeO 3 , BFO) thin films of various thickness were deposited using spray pyrolysis technique at 673 K. The structural studies of the prepared BFO thin films show a rhombohedral structure with R3c space group. The morphological analysis reveals that prepared BFO thin film samples exhibit a uniform and less porous grains. Different thickness of BFO thin films (174–808 nm) was stacked as an active layer between aluminum (Al) and indium doped tin oxide (ITO) electrodes. With the optimum thickness of the BFO intermediate layer, the polarization-electric field (P-E) loop analysis of the ITO/BFO/Al device showed a hysteresis loop with remnant polarization (P r) of 0.21 μC/cm2 and coercive field (E c) of 33.4 kV/cm respectively. The impact of the BFO switching layers with varying thickness towards control of oxygen vacancy (V O) defects and the effective role of polarization induced resistive switching (RS) characteristics were explored. • Realization of BFO resistive switching layers by cost-effective spray pyrolysis technique. • XPS analysis of different thickness of BFO layers to study the control of oxygen vacancy (V O) defects. • The effective role of polarization in BFO layers towards resistive switching (RS) characteristics were explored. [ABSTRACT FROM AUTHOR]
ISSN:07496036
DOI:10.1016/j.spmi.2020.106726