Ferroelectric polarization induced memristive behavior in bismuth ferrite (BiFeO3) based memory devices.
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| Title: | Ferroelectric polarization induced memristive behavior in bismuth ferrite (BiFeO3) based memory devices. |
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| Authors: | Kossar, Shahnaz1 (AUTHOR), Amiruddin, R.1 (AUTHOR) amir@crescent.education, Rasool, Asif1 (AUTHOR), Giridharan, N.V.2 (AUTHOR), Dhayanithi, D.2 (AUTHOR), Santhosh Kumar, M.C.3 (AUTHOR) |
| Source: | Superlattices & Microstructures. Dec2020, Vol. 148, pN.PAG-N.PAG. 1p. |
| Subjects: | Computer storage devices, Bismuth, Ferrites, Indium tin oxide, Thin films, Aluminum films, Barium titanate |
| Abstract: | Bismuth ferrite (BiFeO 3 , BFO) thin films of various thickness were deposited using spray pyrolysis technique at 673 K. The structural studies of the prepared BFO thin films show a rhombohedral structure with R3c space group. The morphological analysis reveals that prepared BFO thin film samples exhibit a uniform and less porous grains. Different thickness of BFO thin films (174–808 nm) was stacked as an active layer between aluminum (Al) and indium doped tin oxide (ITO) electrodes. With the optimum thickness of the BFO intermediate layer, the polarization-electric field (P-E) loop analysis of the ITO/BFO/Al device showed a hysteresis loop with remnant polarization (P r) of 0.21 μC/cm2 and coercive field (E c) of 33.4 kV/cm respectively. The impact of the BFO switching layers with varying thickness towards control of oxygen vacancy (V O) defects and the effective role of polarization induced resistive switching (RS) characteristics were explored. • Realization of BFO resistive switching layers by cost-effective spray pyrolysis technique. • XPS analysis of different thickness of BFO layers to study the control of oxygen vacancy (V O) defects. • The effective role of polarization in BFO layers towards resistive switching (RS) characteristics were explored. [ABSTRACT FROM AUTHOR] |
| Copyright of Superlattices & Microstructures is the property of Academic Press Inc. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
| FullText | Text: Availability: 0 |
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| Header | DbId: egs DbLabel: Engineering Source An: 147248562 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Ferroelectric polarization induced memristive behavior in bismuth ferrite (BiFeO3) based memory devices. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Kossar%2C+Shahnaz%22">Kossar, Shahnaz</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Amiruddin%2C+R%2E%22">Amiruddin, R.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> amir@crescent.education</i><br /><searchLink fieldCode="AR" term="%22Rasool%2C+Asif%22">Rasool, Asif</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Giridharan%2C+N%2EV%2E%22">Giridharan, N.V.</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Dhayanithi%2C+D%2E%22">Dhayanithi, D.</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Santhosh+Kumar%2C+M%2EC%2E%22">Santhosh Kumar, M.C.</searchLink><relatesTo>3</relatesTo> (AUTHOR) – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Superlattices+%26+Microstructures%22">Superlattices & Microstructures</searchLink>. Dec2020, Vol. 148, pN.PAG-N.PAG. 1p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Computer+storage+devices%22">Computer storage devices</searchLink><br /><searchLink fieldCode="DE" term="%22Bismuth%22">Bismuth</searchLink><br /><searchLink fieldCode="DE" term="%22Ferrites%22">Ferrites</searchLink><br /><searchLink fieldCode="DE" term="%22Indium+tin+oxide%22">Indium tin oxide</searchLink><br /><searchLink fieldCode="DE" term="%22Thin+films%22">Thin films</searchLink><br /><searchLink fieldCode="DE" term="%22Aluminum+films%22">Aluminum films</searchLink><br /><searchLink fieldCode="DE" term="%22Barium+titanate%22">Barium titanate</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: Bismuth ferrite (BiFeO 3 , BFO) thin films of various thickness were deposited using spray pyrolysis technique at 673 K. The structural studies of the prepared BFO thin films show a rhombohedral structure with R3c space group. The morphological analysis reveals that prepared BFO thin film samples exhibit a uniform and less porous grains. Different thickness of BFO thin films (174–808 nm) was stacked as an active layer between aluminum (Al) and indium doped tin oxide (ITO) electrodes. With the optimum thickness of the BFO intermediate layer, the polarization-electric field (P-E) loop analysis of the ITO/BFO/Al device showed a hysteresis loop with remnant polarization (P r) of 0.21 μC/cm2 and coercive field (E c) of 33.4 kV/cm respectively. The impact of the BFO switching layers with varying thickness towards control of oxygen vacancy (V O) defects and the effective role of polarization induced resistive switching (RS) characteristics were explored. • Realization of BFO resistive switching layers by cost-effective spray pyrolysis technique. • XPS analysis of different thickness of BFO layers to study the control of oxygen vacancy (V O) defects. • The effective role of polarization in BFO layers towards resistive switching (RS) characteristics were explored. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Superlattices & Microstructures is the property of Academic Press Inc. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1016/j.spmi.2020.106726 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 1 StartPage: N.PAG Subjects: – SubjectFull: Computer storage devices Type: general – SubjectFull: Bismuth Type: general – SubjectFull: Ferrites Type: general – SubjectFull: Indium tin oxide Type: general – SubjectFull: Thin films Type: general – SubjectFull: Aluminum films Type: general – SubjectFull: Barium titanate Type: general Titles: – TitleFull: Ferroelectric polarization induced memristive behavior in bismuth ferrite (BiFeO3) based memory devices. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Kossar, Shahnaz – PersonEntity: Name: NameFull: Amiruddin, R. – PersonEntity: Name: NameFull: Rasool, Asif – PersonEntity: Name: NameFull: Giridharan, N.V. – PersonEntity: Name: NameFull: Dhayanithi, D. – PersonEntity: Name: NameFull: Santhosh Kumar, M.C. IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 12 Text: Dec2020 Type: published Y: 2020 Identifiers: – Type: issn-print Value: 07496036 Numbering: – Type: volume Value: 148 Titles: – TitleFull: Superlattices & Microstructures Type: main |
| ResultId | 1 |
