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Purity analysis for room-temperature semiconductor radiation detection material, CsPbBr3, using ICP-MS.

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Bibliographic Details
Title: Purity analysis for room-temperature semiconductor radiation detection material, CsPbBr3, using ICP-MS.
Authors: Makanda, Ulrich1 (AUTHOR), Voinot, Alexandre2,3 (AUTHOR), Kandel, Ramjee1,3 (AUTHOR), Wu, Yu1 (AUTHOR), Leybourne, Matthew2,3 (AUTHOR), Wang, Peng1,3 (AUTHOR) wang.peng@queensu.ca
Source: JAAS (Journal of Analytical Atomic Spectrometry). Nov2020, Vol. 35 Issue 11, p2672-2678. 7p.
Subjects: Inductively coupled plasma mass spectrometry, Semiconductor analysis, Trace analysis, Perovskite analysis
Abstract: An inductively coupled plasma mass spectrometry (ICP-MS) protocol was developed for trace impurity analysis of the halide perovskite semiconductor, CsPbBr3. Method validation was performed by doping solution synthesized CsPbBr3 samples with distinct amounts of a multi-element mixture. The limit of detection (LOD) for the twelve doped elements (Zn, Cr, Ga, Mn, Tl, Bi, As, In, Sn, Ni, Se and Sb) ranged from 0.0004 μg L−1 to 0.377 μg L−1, whereas the limit of quantification (LOQ) ranged from 0.001 μg L−1 to 1.26 μg L−1. Apart from Cr and Se, a linear relationship between doped and detected concentration was observed amongst these elements. The validated ICP-MS process was applied to a high temperature zone-refined CsPbBr3 ingot to study impurity segregation. The total impurity levels (TIL) of the zone-refined samples range from 15.7 ± 1.3 to 54.6 ± 1.2 μg g−1 and depend on the positions of the samples within the ingot. [ABSTRACT FROM AUTHOR]
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Database: Engineering Source
Description
Abstract:An inductively coupled plasma mass spectrometry (ICP-MS) protocol was developed for trace impurity analysis of the halide perovskite semiconductor, CsPbBr3. Method validation was performed by doping solution synthesized CsPbBr3 samples with distinct amounts of a multi-element mixture. The limit of detection (LOD) for the twelve doped elements (Zn, Cr, Ga, Mn, Tl, Bi, As, In, Sn, Ni, Se and Sb) ranged from 0.0004 μg L−1 to 0.377 μg L−1, whereas the limit of quantification (LOQ) ranged from 0.001 μg L−1 to 1.26 μg L−1. Apart from Cr and Se, a linear relationship between doped and detected concentration was observed amongst these elements. The validated ICP-MS process was applied to a high temperature zone-refined CsPbBr3 ingot to study impurity segregation. The total impurity levels (TIL) of the zone-refined samples range from 15.7 ± 1.3 to 54.6 ± 1.2 μg g−1 and depend on the positions of the samples within the ingot. [ABSTRACT FROM AUTHOR]
ISSN:02679477
DOI:10.1039/d0ja00223b