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Impact of vacuum on the resistive switching in HfO2-based conductive-bridge RAM with highly-doped silicon bottom electrode.

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Bibliographic Details
Title: Impact of vacuum on the resistive switching in HfO2-based conductive-bridge RAM with highly-doped silicon bottom electrode.
Authors: Humood, Khaled1 (AUTHOR), Saylan, Sueda1 (AUTHOR), Abi Jaoude, Maguy1,2 (AUTHOR) maguy.abijaoude@ku.ac.ae, Mohammad, Baker1 (AUTHOR) baker.mohammad@ku.ac.ae, Ravaux, Florent3 (AUTHOR)
Source: Materials Science & Engineering: B. Sep2021, Vol. 271, pN.PAG-N.PAG. 1p.
Subjects: Electrodes, Silicon, Fibers, Passivation
Abstract: [Display omitted] • Vacuum influences the resistive switching in HfO 2 -based CBRAM. • The "erase" operation in vacuum shows a parasitic SET (N-SET). • The onset of the parasitic SET is influenced by moisture desorption. • Oxygen vacancy/partially ruptured metallic filaments likely control the N-SET. • Vacuum effect can be prevented by encapsulation and reversed by gas passivation. Moisture can modulate the resistive switching dynamics in oxide-based electrochemical metallization devices. Unconventional testing environments such as vacuum, could possibly shift the device characteristics, requiring therefore a careful investigation. This work investigates the write/erase behavior of Cu/HfO 2 (~80-nm-thick)/p+-Si devices in ambient atmosphere and vacuum, under similar electrical bias applied to the top Cu electrode. In vacuum (~5.3 × 10−3 Pa), a parasitic negative SET (N-SET) readily arises during the "erase" operation, unlike in ambient air. The electrical studies and physicochemical analyses of electrically-biased and pristine devices reveal that the "erase" process is sensitive to the environment. Vacuum facilitates the electric-field-controlled generation of an oxygen-vacancy-based path that likely induces a parasitic N-SET at the negative voltage. This path is aided by the presence of partially-ruptured copper filaments at the HfO 2 /p+-Si interface. The vacuum effects leading to the N-SET are eliminated by introducing a passivating gas environment (zero-air or nitrogen), or device encapsulation. [ABSTRACT FROM AUTHOR]
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Database: Engineering Source
Description
Abstract:[Display omitted] • Vacuum influences the resistive switching in HfO 2 -based CBRAM. • The "erase" operation in vacuum shows a parasitic SET (N-SET). • The onset of the parasitic SET is influenced by moisture desorption. • Oxygen vacancy/partially ruptured metallic filaments likely control the N-SET. • Vacuum effect can be prevented by encapsulation and reversed by gas passivation. Moisture can modulate the resistive switching dynamics in oxide-based electrochemical metallization devices. Unconventional testing environments such as vacuum, could possibly shift the device characteristics, requiring therefore a careful investigation. This work investigates the write/erase behavior of Cu/HfO 2 (~80-nm-thick)/p+-Si devices in ambient atmosphere and vacuum, under similar electrical bias applied to the top Cu electrode. In vacuum (~5.3 × 10−3 Pa), a parasitic negative SET (N-SET) readily arises during the "erase" operation, unlike in ambient air. The electrical studies and physicochemical analyses of electrically-biased and pristine devices reveal that the "erase" process is sensitive to the environment. Vacuum facilitates the electric-field-controlled generation of an oxygen-vacancy-based path that likely induces a parasitic N-SET at the negative voltage. This path is aided by the presence of partially-ruptured copper filaments at the HfO 2 /p+-Si interface. The vacuum effects leading to the N-SET are eliminated by introducing a passivating gas environment (zero-air or nitrogen), or device encapsulation. [ABSTRACT FROM AUTHOR]
ISSN:09215107
DOI:10.1016/j.mseb.2021.115267