APA (7th ed.) Citation

Humood, K., Saylan, S., Abi Jaoude, M., Mohammad, B., & Ravaux, F. (2021). Impact of vacuum on the resistive switching in HfO2-based conductive-bridge RAM with highly-doped silicon bottom electrode. Materials Science & Engineering: B, 271, N.PAG. https://doi.org/10.1016/j.mseb.2021.115267

Chicago Style (17th ed.) Citation

Humood, Khaled, Sueda Saylan, Maguy Abi Jaoude, Baker Mohammad, and Florent Ravaux. "Impact of Vacuum on the Resistive Switching in HfO2-based Conductive-bridge RAM with Highly-doped Silicon Bottom Electrode." Materials Science & Engineering: B 271 (2021): N.PAG. https://doi.org/10.1016/j.mseb.2021.115267.

MLA (9th ed.) Citation

Humood, Khaled, et al. "Impact of Vacuum on the Resistive Switching in HfO2-based Conductive-bridge RAM with Highly-doped Silicon Bottom Electrode." Materials Science & Engineering: B, vol. 271, 2021, p. N.PAG, https://doi.org/10.1016/j.mseb.2021.115267.