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Impact of vacuum on the resistive switching in HfO2-based conductive-bridge RAM with highly-doped silicon bottom electrode.

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Title: Impact of vacuum on the resistive switching in HfO2-based conductive-bridge RAM with highly-doped silicon bottom electrode.
Authors: Humood, Khaled1 (AUTHOR), Saylan, Sueda1 (AUTHOR), Abi Jaoude, Maguy1,2 (AUTHOR) maguy.abijaoude@ku.ac.ae, Mohammad, Baker1 (AUTHOR) baker.mohammad@ku.ac.ae, Ravaux, Florent3 (AUTHOR)
Source: Materials Science & Engineering: B. Sep2021, Vol. 271, pN.PAG-N.PAG. 1p.
Subjects: Electrodes, Silicon, Fibers, Passivation
Abstract: [Display omitted] • Vacuum influences the resistive switching in HfO 2 -based CBRAM. • The "erase" operation in vacuum shows a parasitic SET (N-SET). • The onset of the parasitic SET is influenced by moisture desorption. • Oxygen vacancy/partially ruptured metallic filaments likely control the N-SET. • Vacuum effect can be prevented by encapsulation and reversed by gas passivation. Moisture can modulate the resistive switching dynamics in oxide-based electrochemical metallization devices. Unconventional testing environments such as vacuum, could possibly shift the device characteristics, requiring therefore a careful investigation. This work investigates the write/erase behavior of Cu/HfO 2 (~80-nm-thick)/p+-Si devices in ambient atmosphere and vacuum, under similar electrical bias applied to the top Cu electrode. In vacuum (~5.3 × 10−3 Pa), a parasitic negative SET (N-SET) readily arises during the "erase" operation, unlike in ambient air. The electrical studies and physicochemical analyses of electrically-biased and pristine devices reveal that the "erase" process is sensitive to the environment. Vacuum facilitates the electric-field-controlled generation of an oxygen-vacancy-based path that likely induces a parasitic N-SET at the negative voltage. This path is aided by the presence of partially-ruptured copper filaments at the HfO 2 /p+-Si interface. The vacuum effects leading to the N-SET are eliminated by introducing a passivating gas environment (zero-air or nitrogen), or device encapsulation. [ABSTRACT FROM AUTHOR]
Copyright of Materials Science & Engineering: B is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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Header DbId: egs
DbLabel: Engineering Source
An: 151556812
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
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Items – Name: Title
  Label: Title
  Group: Ti
  Data: Impact of vacuum on the resistive switching in HfO2-based conductive-bridge RAM with highly-doped silicon bottom electrode.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AR" term="%22Humood%2C+Khaled%22">Humood, Khaled</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Saylan%2C+Sueda%22">Saylan, Sueda</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Abi+Jaoude%2C+Maguy%22">Abi Jaoude, Maguy</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<i> maguy.abijaoude@ku.ac.ae</i><br /><searchLink fieldCode="AR" term="%22Mohammad%2C+Baker%22">Mohammad, Baker</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> baker.mohammad@ku.ac.ae</i><br /><searchLink fieldCode="AR" term="%22Ravaux%2C+Florent%22">Ravaux, Florent</searchLink><relatesTo>3</relatesTo> (AUTHOR)
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22Materials+Science+%26+Engineering%3A+B%22">Materials Science & Engineering: B</searchLink>. Sep2021, Vol. 271, pN.PAG-N.PAG. 1p.
– Name: Subject
  Label: Subjects
  Group: Su
  Data: <searchLink fieldCode="DE" term="%22Electrodes%22">Electrodes</searchLink><br /><searchLink fieldCode="DE" term="%22Silicon%22">Silicon</searchLink><br /><searchLink fieldCode="DE" term="%22Fibers%22">Fibers</searchLink><br /><searchLink fieldCode="DE" term="%22Passivation%22">Passivation</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: [Display omitted] • Vacuum influences the resistive switching in HfO 2 -based CBRAM. • The "erase" operation in vacuum shows a parasitic SET (N-SET). • The onset of the parasitic SET is influenced by moisture desorption. • Oxygen vacancy/partially ruptured metallic filaments likely control the N-SET. • Vacuum effect can be prevented by encapsulation and reversed by gas passivation. Moisture can modulate the resistive switching dynamics in oxide-based electrochemical metallization devices. Unconventional testing environments such as vacuum, could possibly shift the device characteristics, requiring therefore a careful investigation. This work investigates the write/erase behavior of Cu/HfO 2 (~80-nm-thick)/p+-Si devices in ambient atmosphere and vacuum, under similar electrical bias applied to the top Cu electrode. In vacuum (~5.3 × 10−3 Pa), a parasitic negative SET (N-SET) readily arises during the "erase" operation, unlike in ambient air. The electrical studies and physicochemical analyses of electrically-biased and pristine devices reveal that the "erase" process is sensitive to the environment. Vacuum facilitates the electric-field-controlled generation of an oxygen-vacancy-based path that likely induces a parasitic N-SET at the negative voltage. This path is aided by the presence of partially-ruptured copper filaments at the HfO 2 /p+-Si interface. The vacuum effects leading to the N-SET are eliminated by introducing a passivating gas environment (zero-air or nitrogen), or device encapsulation. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Materials Science & Engineering: B is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1016/j.mseb.2021.115267
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 1
        StartPage: N.PAG
    Subjects:
      – SubjectFull: Electrodes
        Type: general
      – SubjectFull: Silicon
        Type: general
      – SubjectFull: Fibers
        Type: general
      – SubjectFull: Passivation
        Type: general
    Titles:
      – TitleFull: Impact of vacuum on the resistive switching in HfO2-based conductive-bridge RAM with highly-doped silicon bottom electrode.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Humood, Khaled
      – PersonEntity:
          Name:
            NameFull: Saylan, Sueda
      – PersonEntity:
          Name:
            NameFull: Abi Jaoude, Maguy
      – PersonEntity:
          Name:
            NameFull: Mohammad, Baker
      – PersonEntity:
          Name:
            NameFull: Ravaux, Florent
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 01
              M: 09
              Text: Sep2021
              Type: published
              Y: 2021
          Identifiers:
            – Type: issn-print
              Value: 09215107
          Numbering:
            – Type: volume
              Value: 271
          Titles:
            – TitleFull: Materials Science & Engineering: B
              Type: main
ResultId 1