Characteristics of GZO-based multilayer transparent conducting films.

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Title: Characteristics of GZO-based multilayer transparent conducting films.
Authors: Liu, Chih-Yi1 (AUTHOR) cyliu@nkust.edu.tw, Lin, Chao-Cheng2 (AUTHOR), Lai, Chun-Hung3 (AUTHOR), Liu, Shih-Kun4 (AUTHOR) cyliu@nkust.edu.tw, Ye, Chang-Sin5 (AUTHOR), Tien, Wei-Chen5 (AUTHOR), Hsu, Meng-Ren1 (AUTHOR)
Source: International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics. 5/30/2021, Vol. 35 Issue 14-16, p1-5. 5p.
Subjects: Optical properties, Multilayered thin films, Thermal stability, Zinc oxide, Evaporators
Abstract: Ga-doped ZnO (GZO)/metal/GZO structures were fabricated on glass substrates to be the transparent conducting layers in this study. GZO films and metal films were deposited at room-temperature by a radio-frequency sputter and a thermal evaporator, respectively. The GZO/Ag/GZO (GAG) structures had poor electrical and optical properties due to the formation of Ag islands on the GZO layer. A 1-nm Cu seed layer was deposited on the GZO layer to fabricate the GZO/Ag/Cu/GZO (GACG) structure to improve its electrical and optical properties. The GACG structure had sheet resistance of 9 Ω , average visible transmittance of 86% and figure of merit of 2. 5 × 1 0 − 2 Ω − 1 . In addition, the sheet resistance of the GACG structure kept almost the same after annealing at 3 0 0 ∘ C in atmosphere for more than 5 h, which showed good thermal stability. [ABSTRACT FROM AUTHOR]
Copyright of International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics is the property of World Scientific Publishing Company and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Data: Characteristics of GZO-based multilayer transparent conducting films.
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  Data: <searchLink fieldCode="AR" term="%22Liu%2C+Chih-Yi%22">Liu, Chih-Yi</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> cyliu@nkust.edu.tw</i><br /><searchLink fieldCode="AR" term="%22Lin%2C+Chao-Cheng%22">Lin, Chao-Cheng</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Lai%2C+Chun-Hung%22">Lai, Chun-Hung</searchLink><relatesTo>3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Liu%2C+Shih-Kun%22">Liu, Shih-Kun</searchLink><relatesTo>4</relatesTo> (AUTHOR)<i> <email>cyliu@nkust.edu.tw</email></i><br /><searchLink fieldCode="AR" term="%22Ye%2C+Chang-Sin%22">Ye, Chang-Sin</searchLink><relatesTo>5</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Tien%2C+Wei-Chen%22">Tien, Wei-Chen</searchLink><relatesTo>5</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Hsu%2C+Meng-Ren%22">Hsu, Meng-Ren</searchLink><relatesTo>1</relatesTo> (AUTHOR)
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  Data: <searchLink fieldCode="JN" term="%22International+Journal+of+Modern+Physics+B%3A+Condensed+Matter+Physics%3B+Statistical+Physics%3B+Applied+Physics%22">International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics</searchLink>. 5/30/2021, Vol. 35 Issue 14-16, p1-5. 5p.
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  Data: <searchLink fieldCode="DE" term="%22Optical+properties%22">Optical properties</searchLink><br /><searchLink fieldCode="DE" term="%22Multilayered+thin+films%22">Multilayered thin films</searchLink><br /><searchLink fieldCode="DE" term="%22Thermal+stability%22">Thermal stability</searchLink><br /><searchLink fieldCode="DE" term="%22Zinc+oxide%22">Zinc oxide</searchLink><br /><searchLink fieldCode="DE" term="%22Evaporators%22">Evaporators</searchLink>
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  Data: Ga-doped ZnO (GZO)/metal/GZO structures were fabricated on glass substrates to be the transparent conducting layers in this study. GZO films and metal films were deposited at room-temperature by a radio-frequency sputter and a thermal evaporator, respectively. The GZO/Ag/GZO (GAG) structures had poor electrical and optical properties due to the formation of Ag islands on the GZO layer. A 1-nm Cu seed layer was deposited on the GZO layer to fabricate the GZO/Ag/Cu/GZO (GACG) structure to improve its electrical and optical properties. The GACG structure had sheet resistance of 9 Ω , average visible transmittance of 86% and figure of merit of 2. 5 × 1 0 − 2 Ω − 1 . In addition, the sheet resistance of the GACG structure kept almost the same after annealing at 3 0 0 ∘ C in atmosphere for more than 5 h, which showed good thermal stability. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
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  Data: <i>Copyright of International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics is the property of World Scientific Publishing Company and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
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        Value: 10.1142/S021797922140004X
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      – Code: eng
        Text: English
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        PageCount: 5
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      – SubjectFull: Optical properties
        Type: general
      – SubjectFull: Multilayered thin films
        Type: general
      – SubjectFull: Thermal stability
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      – SubjectFull: Zinc oxide
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      – SubjectFull: Evaporators
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      – TitleFull: Characteristics of GZO-based multilayer transparent conducting films.
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            NameFull: Liu, Chih-Yi
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            NameFull: Lin, Chao-Cheng
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            NameFull: Ye, Chang-Sin
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              M: 05
              Text: 5/30/2021
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              Y: 2021
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